PDTA114ET

DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PDTA114ET PNP resistor-equipped transistor Product specification Supersedes data of 1998 May 15 1999 Apr 13 Philips Semiconductors Product specification PNP resistor-equipped transistor FEATURES Built-in bias resistors R1 and R2 (typ. 10 kΩ each) Simplification of circuit design Reduces number of components and board space. APPLICATIONS Especially suitable for space reduction in interface and driver circuits Inverter circuit configurations without use of external resistors. handbook, 4 columns PDTA114ET 3 3 R1 1 R2 2 1 2 MAM100 Top view Fig.1 Simplified outline (SOT23) and symbol. DESCRIPTION PNP resistor-equipped transistor in a SOT23 plastic package. NPN complement: PDTC114ET. 1 3 2 MARKING TYPE NUMBER PDTA114ET Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) ∗03 PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground (+) collector/output MGA893 - 1 Fig.2 Equivalent inverter symbol. 1999 Apr 13 2 Philips Semiconductors Product specification PNP resistor-equipped transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO VI PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit boar...