PDTA114EU

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTA114EU PNP resistor-equipped transistor Product specification Supersedes data of 1998 May 18 1999 Apr 13 Philips Semiconductors Product specification PNP resistor-equipped transistor FEATURES Built-in bias resistors R1 and R2 (typ. 10 kΩ each) Simplification of circuit design Reduces number of components and board space. APPLICATIONS Especially suitable for space reduction in interface and driver circuits Inverter circuit configurations without use of external resistors. DESCRIPTION PNP resistor-equipped transistor in a SOT323 plastic package. NPN complement: PDTC114EU. PINNING MGA893 - 1 PDTA114EU handbook, 4 columns 3 3 R1 1 R2 2 1 Top view 2 MAM135 Fig.1 Simplified outline (SOT323) and symbol. MARKING TYPE NUMBER 1 2 3 MARKING CODE(1) ∗03 PDTA114EU Note PIN 1 2 3 DESCRIPTION base/input emitter/ground (+) collector/output Fig.2 Equivalent inverter symbol. 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. 1999 Apr 13 2 Philips Semiconductors Product specification PNP resistor-equipped transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO VI PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit...