PDTA114TK

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 PDTA114TK PNP resistor-equipped transistor Product specification Supersedes data of 1997 Sep 05 File under Discrete Semiconductors, SC04 1998 May 15 Philips Semiconductors Product specification PNP resistor-equipped transistor FEATURES Built-in bias resistor R1 (typ. 10 kΩ) Simplification of circuit design Reduces number of components and board space. APPLICATIONS Especially suitable for space reduction in interface and driver circuits Inverter circuit configurations without use of external resistor. 1 Top view 2 MAM289 PDTA114TK handbook, halfpage 3 3 R1 1 2 Fig.1 Simplified outline (SC-59) and symbol. DESCRIPTION PNP resistor-equipped transistor in a SC-59 plastic package. NPN complement: PDTC114TK. 1 3 2 MARKING TYPE NUMBER PDTA114TK MARKING CODE 23 PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground (+) collector/output MGA893 - 1 Fig.2 Equivalent inverter symbol. QUICK REFERENCE DATA SYMBOL VCEO IO ICM Ptot hFE R1 PARAMETER collector-emitter voltage output current (DC) peak collector current total power dissipation DC current gain input resistor Tamb ≤ 25 °C IC = −1 mA; VCE = −5 V CONDITIONS open base − − − − 200 7 MIN. − − − − − 10 TYP. MAX. −50 −100 −100 250 − 13 kΩ UNIT V mA mA mW 1998 May 15 2 Philips Semiconductors Product specification PNP resistor-equipped transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IO ICM P...