PDTA114TT

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTA114TT PNP resistor-equipped transistor Objective specification Supersedes data of 1998 May 18 1999 Apr 13 Philips Semiconductors Objective specification PNP resistor-equipped transistor FEATURES Built-in bias resistor R1 (typ. 10 kΩ) Simplification of circuit design Reduces number of components and board space. APPLICATIONS Especially suitable for space reduction in interface and driver circuits Inverter circuit configurations without use of an external resistor. 1 Top view 2 MAM286 PDTA114TT handbook, 4 columns 3 3 R1 1 2 Fig.1 Simplified outline (SOT23) and symbol. DESCRIPTION PNP resistor-equipped transistor in a SOT23 plastic package. NPN complement: PDTC114TT. 1 3 2 MARKING TYPE NUMBER PDTA114TT Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) ∗11 PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground (+) collector/output MGA893 - 1 Fig.2 Equivalent inverter symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IO ICM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage output current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − −65 − −65 MIN. ...