DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D102
PDTA114TU PNP resistor-equipped transistor
Product specificat...
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D102
PDTA114TU
PNP resistor-equipped
transistor
Product specification Supersedes data of 1998 May 15 1999 Apr 13
Philips Semiconductors
Product specification
PNP resistor-equipped
transistor
FEATURES Built-in bias resistor R1(typ. 10 kΩ) Simplification of circuit design Reduces number of components and board space. APPLICATIONS Especially suitable for space reduction in interface and driver circuits Inverter circuit configurations without use of an external resistor.
handbook, 4 columns
PDTA114TU
3 3 R1 1
2 1 Top view 2
MAM278
Fig.1 Simplified outline (SOT323) and symbol. DESCRIPTION
PNP resistor-equipped
transistor in a SOT323 plastic package.
NPN complement: PDTC114TU.
1 3 2
MARKING TYPE NUMBER PDTA114TU Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) ∗23
PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground (+) collector/output
MGA893 - 1
Fig.2
Equivalent inverter symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IO ICM Ptot Tstg Tj Tamb Note 1.
Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage output current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − −65 − −65 MIN. MAX...