LC3564BM

Ordering number : EN5804A CMOS IC LC3564B, BS, BM, BT-70/10 64K (8192-word × 8-bit) SRAM with OE, CE1, and CE2 Control Pins Overview The LC3564B, LC3564BS, LC3564BM, and LC3564BT are 8192-word × 8-bit asynchronous silicon gate CMOS SRAMs. These are full CMOS type SRAMs that adopt a six-transistor memory cell and feature fast access times, low operating power dissipation, and an ultralow standby current. These SRAMs provide three control signal inputs: an OE input for high-speed memory access, and two chip enable lines, CE1 and CE2, for low power mode and device selection. These means that these SRAMs area ideal for systems that require low power and battery backup, and that they support easy memory expansion. The ultralow standby current that is a feature of these SRAMs allows them to be used with capacitor backup as well. Since these SRAMs support 3-V operation, they are also appropriate for use in portable battery operated systems. Three control inputs: OE, CE1, and CE2 Shared input and output pins, three-state outputs No clock required Packages 28-pin DIP (600 mil) plastic package: LC3564B 28-pin DIP (300 mil) plastic package: LC3564BS 28-pin SOP (450 mil) plastic package: LC3564BM 28-pin TSOP (8 × 13.4 mm) plastic package: LC3564BT Package Dimensions unit: mm 3012A-DIP28 (600 mil) [LC3564B] Features Supply voltage range: 2.7 to 5.5 V — In 5-V operation mode: 5.0 V ±10% — In 3-V operation mode: 3.0 V ±10% Address access time (tAA) — In 5-V operation mode...