PDTA123JE

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA123JE PNP resistor-equipped transistor Product specification Supersedes data of 1997 Dec 15 1998 Nov 25 Philips Semiconductors Product specification PNP resistor-equipped transistor FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 kΩ and 47 kΩ respectively) Simplification of circuit design Reduces number of components and board space. 1 2 handbook, halfpage PDTA123JE 3 R1 1 R2 3 2 MAM345 APPLICATIONS Especially suitable for space reduction in interface and driver circuits Inverter circuit configurations without use of external resistors. DESCRIPTION PNP resistor-equipped transistor in a SC-75 (SOT416) plastic package. NPN complement: PDTC123JE. PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground (+) collector/output Fig.2 Top view Fig.1 Simplified outline (SC-75; SOT416) and symbol. MARKING TYPE NUMBER 3 2 MGA893 - 1 1 MARKING CODE 27 PDTA123JE Equivalent inverter symbol. QUICK REFERENCE DATA SYMBOL VCEO IO ICM Ptot hFE R1 R2 ------R1 PARAMETER collector-emitter voltage output current (DC) peak collector current total power dissipation DC current gain input resistor resistor ratio Tamb ≤ 25 °C IC = −10 mA; VCE = −5 V CONDITIONS open base − − − − 100 1.54 17 MIN. − − − − − 2.2 21 TYP. MAX. −50 −100 −100 150 − 2.86 26 kΩ UNIT V mA mA mW 1998 Nov 25 2 Philips Semiconductors Product specification PNP resistor-equipped transistor LIMITING VALUES In accordance with the Absolute Maximum Rating Syste...