Asynchronous Silicon Gate 1M (131 /072 words x 8 bits) SRAM
Description
Ordering number : ENN*6624
CMOS IC
LC35W1000BM, BTS-70U/10U
Asynchronous Silicon Gate 1M (131,072 words × 8 bits) SRAM
Preliminary Overview
The LC35W1000BM and LC35W1000BTS-70U/10U are asynchronous silicon gate CMOS static RAM devices with a 131,072-word by 8-bit structure. They provide two chip enable pins (CE1 and CE2) for device select/deselect control ...
