PDTA124EEF

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA124EEF PNP resistor-equipped transistor Product specification 2001 Jun 11 Philips Semiconductors Product specification PNP resistor-equipped transistor FEATURES Built-in bias resistors R1 and R2 (typical 22 kΩ each) Simplification of circuit design Reduces number of components and board space. APPLICATIONS Especially suitable for space reduction in interface and driver circuits Inverter circuit configuration without use of external resistors. DESCRIPTION PNP resistor equipped transistor in an SC-89 (SOT490) plastic package. MARKING TYPE NUMBER PDTA124EEF 3R 1 2 MGA893 - 1 PDTA124EEF PINNING PIN 1 2 3 base/input emitter/ground (+) collector/output DESCRIPTION handbook, halfpage 3 R1 1 R2 3 1 Top view 2 MAM413 2 Fig.1 Simplified outline (SC-89; SOT490) and symbol. MARKING CODE 3 Fig.2 Equivalent circuit. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO VI PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Note 1. Refer to SC-89 (SOT490) standard mounting conditions. 2001 Jun 11 2 output current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 − − − − − −65 − −65 +10 −40 −100 −100 250 +150 150 +150 V V mA mA mW °C °C °C CONDITIONS open emitter open base open collector − − − M...