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PDTA124XEF Dataheets PDF



Part Number PDTA124XEF
Manufacturers NXP
Logo NXP
Description PNP resistor-equipped transistor
Datasheet PDTA124XEF DatasheetPDTA124XEF Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA124XEF PNP resistor-equipped transistor Preliminary specification Supersedes data of 1998 Nov 16 1999 May 25 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor FEATURES • Power dissipation comparable to SOT23 • Built-in bias resistors R1 and R2 (typ. 22 kΩ and 47 kΩ respectively) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space reduction .

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DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA124XEF PNP resistor-equipped transistor Preliminary specification Supersedes data of 1998 Nov 16 1999 May 25 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor FEATURES • Power dissipation comparable to SOT23 • Built-in bias resistors R1 and R2 (typ. 22 kΩ and 47 kΩ respectively) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space reduction in interface and driver circuits • Inverter circuit configurations without use of external resistors. 1 2 MAM413 PDTA124XEF PINNING PIN 1 2 3 base/input emitter/ground (+) collector/output DESCRIPTION handbook, halfpage 3 R1 1 R2 3 2 DESCRIPTION PNP resistor-equipped transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. NPN complement: PDTC124XEF. MARKING TYPE NUMBER PDTA124XEF MARKING CODE 31 Top view Fig.1 Simplified outline (SC-89; SOT490) and symbol. 1 2 MGA893 - 1 3 Fig.2 Equivalent inverter symbol. 1999 May 25 2 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO VI PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Note 1. Refer to SC-89 (SOT490) standard mounting conditions. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SC-89 (SOT490) standard mounting conditions. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO ICEO IEBO hFE VCEsat Vi(off) Vi(on) R1 R2 ------R1 Cc PARAMETER collector cut-off current collector cut-off current emitter cut-off current DC current gain input-off voltage input-on voltage input resistor resistor ratio collector capacitance CONDITIONS IE = 0; VCB = −50 V IB = 0; VCE = −30 V IB = 0; VCE = −30 V; Tj = 150 °C IC = 0; VEB = −5 V IC = −5 mA; VCE = −5 V IC = −100 µA; VCE = −5 V IC = −2 mA; VCE = −300 mV MIN. − − − − 80 − − −2 15.4 1.7 IE = ie = 0; VCB = −10 V; f = 1 MHz − PARAMETER thermal resistance from junction to ambient CONDITIONS in free air; note 1 output current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 − − − − − −65 − −65 CONDITIONS open emitter open base open collector − − − MIN. PDTA124XEF MAX. −50 −50 −10 +10 −40 −100 −100 250 +150 150 +150 V V V V V UNIT mA mA mW °C °C °C VALUE 500 UNIT K/W TYP. − − − − − − −0.8 −1.1 22 2.1 − MAX. −100 −1 −50 −120 − −150 −0.5 − 28.6 2.6 3 UNIT nA µA µA µA mV V V kΩ collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA pF 1999 May 25 3 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA124XEF 103 handbook, halfpage hFE (1) (2) MGL556 −103 handbook, halfpage VCEsat (mV) MGL557 102 (3) −102 (1) 10 (2) (3) 1 −10−1 −1 −10 IC (mA) −102 −10 −10−1 −1 −10 IC (mA) −102 VCE = −5 V. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C. IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C. Fig.3 DC current gain as a function of collector current; typical values. Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. −104 handbook, halfpage Vi(off) (mV) MGL558 −104 handbook, halfpage Vi(on) (mV) MGL559 (1) −103 (1) (2) (3) −103 (2) (3) −102 −10−2 −10−1 −1 IC (mA) −10 −102 −10−1 −1 −10 IC (mA) −102 VCE = −5 V. (1) Tamb = −40 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. VCE = −0.3 V. (1) Tamb = −40 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Fig.5 Input-off voltage as a function of collector current; typical values. Fig.6 Input-on voltage as a function of collector current; typical values. 1999 May 25 4 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PACKAGE OUTLINE Plastic surface mounted package; 3 leads PDTA124XEF SOT490 D B E A X HE v M A 3 A 1 e1 e bp 2 w M B Lp detail X c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 0.8 0.6 bp 0.33 0.23 c 0.2 0.1 D 1.7 1.5 E 0.95 0.75 e 1.0 e1 0.5 HE 1.7 1.5 Lp 0.5 0.3 v 0.1 w 0.1 OUTLINE VERSION SOT490 REFERENCES IEC JEDEC EIAJ SC-89 EUROPEAN PROJECTION ISSUE DATE 98-10-23 1999 May 25 5 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values PDTA124XEF This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These ar.


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