PDTA143ET

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTA143ET PNP resistor-equipped transistor Product specification Supersedes data of 1998 May 18 1999 Apr 13 Philips Semiconductors Product specification PNP resistor-equipped transistor FEATURES Built-in bias resistors R1 and R2 (typ. 4.7 kΩ each) Simplification of circuit design Reduces number of components and board space. APPLICATIONS Especially suitable for space reduction in interface and driver circuits. Inverter circuit configurations without use of external resistors. DESCRIPTION PNP resistor-equipped transistor in a SOT23 plastic package. NPN complement: PDTC143ET. PINNING MGA893 - 1 PDTA143ET handbook, 4 columns 3 3 R1 1 R2 2 1 2 MAM100 Top view Fig.1 Simplified outline (SOT23) and symbol. MARKING TYPE NUMBER PDTA143ET 2 1 3 MARKING CODE(1) ∗01 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. PIN 1 2 3 DESCRIPTION base/input emitter/ground (+) collector/output Fig.2 Equivalent inverter symbol. 1999 Apr 13 2 Philips Semiconductors Product specification PNP resistor-equipped transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO VI PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circu...