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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D173
PDTA143XE PNP resistor-equipped transistor
Product specification 1999 Apr 20
Philips Semiconductors
Product specification
PNP resistor-equipped transistor
FEATURES • Built-in bias resistors R1 and R2 (typ. 4.7 kΩ and 10 kΩ respectively) • Simplification of circuit design • Reduces number of components and board space.
1 2
handbook, halfpage
PDTA143XE
3 R1 1 R2
3
2
MAM345
APPLICATIONS • Especially suitable for space reduction in interface and driver circuits • Inverter circuit configurations without use of external resistors. DESCRIPTION PNP resistor-equipped transistor in an SC-75 (SOT416) plastic package. PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground (+) collector/output Fig.2
Top view
Fig.1 Simplified outline SC-75 (SOT416) and symbol.
MARKING TYPE NUMBER PDTA143XE
2
MGA893 - 1
1
3
MARKING CODE 35
Equivalent inverter symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO VI PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Note 1. Refer to SC-75 (SOT416) standard mounting conditions. 1999 Apr 20 2 output current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 − − − − − −65 − −65 7 −20 −100 −100 150 +150 150 +150 V V mA mA mW °C °C °C CONDITIONS open emitter open base open collector − − − MIN. MAX. −50 −50 −10 V V V UNIT
Philips Semiconductors
Product specification
PNP resistor-equipped transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SC-75 (SOT416) standard mounting conditions. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO ICEO IEBO hFE VCEsat Vi(off) Vi(on) R1 R2 ------R1 Cc PARAMETER collector cut-off current collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage input-off voltage input-on voltage input resistor resistor ratio collector capacitance IE = ie = 0; VCB = −10 V; f = 1 MHz CONDITIONS IE = 0; VCB = −50 V IB = 0; VCE = −30 V IB = 0; VCE = −30 V; Tj = 150 °C IC = 0; VEB = −5 V IC = −10 mA; VCE = −5 V IC = −10 mA; IB = −0.5 mA IC = −100 µA; VCE = −5 V IC = −20 mA; VCE = −0.3 V MIN. − − − − 50 − − −2.5 3.3 1.7 − PARAMETER thermal resistance from junction to ambient CONDITIONS note 1
PDTA143XE
VALUE 833
UNIT K/W
TYP. − − − − − − − − 4.7 2.1 −
MAX. −100 −1 −50 −0.6 − −150 −0.3 − 6.1 2.6 3
UNIT nA µA µA mA mV V V kΩ
pF
1999 Apr 20
3
Philips Semiconductors
Product specification
PNP resistor-equipped transistor
PDTA143XE
103 handbook, halfpage hFE
(2) (1)
MGR818
−103 handbook, halfpage
MGR821
VCEsat (mV)
102
(3)
−102
(1) (3)
10
(2)
1 −10−1
−1
−10
IC (mA)
−102
−10 −1
−10
IC (mA)
−102
VCE = −5 V. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C.
IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C.
F.