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PDTA143XE Dataheets PDF



Part Number PDTA143XE
Manufacturers NXP
Logo NXP
Description PNP resistor-equipped transistor
Datasheet PDTA143XE DatasheetPDTA143XE Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA143XE PNP resistor-equipped transistor Product specification 1999 Apr 20 Philips Semiconductors Product specification PNP resistor-equipped transistor FEATURES • Built-in bias resistors R1 and R2 (typ. 4.7 kΩ and 10 kΩ respectively) • Simplification of circuit design • Reduces number of components and board space. 1 2 handbook, halfpage PDTA143XE 3 R1 1 R2 3 2 MAM345 APPLICATIONS • Especially suitable for space reduction in interface and dri.

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DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA143XE PNP resistor-equipped transistor Product specification 1999 Apr 20 Philips Semiconductors Product specification PNP resistor-equipped transistor FEATURES • Built-in bias resistors R1 and R2 (typ. 4.7 kΩ and 10 kΩ respectively) • Simplification of circuit design • Reduces number of components and board space. 1 2 handbook, halfpage PDTA143XE 3 R1 1 R2 3 2 MAM345 APPLICATIONS • Especially suitable for space reduction in interface and driver circuits • Inverter circuit configurations without use of external resistors. DESCRIPTION PNP resistor-equipped transistor in an SC-75 (SOT416) plastic package. PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground (+) collector/output Fig.2 Top view Fig.1 Simplified outline SC-75 (SOT416) and symbol. MARKING TYPE NUMBER PDTA143XE 2 MGA893 - 1 1 3 MARKING CODE 35 Equivalent inverter symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO VI PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Note 1. Refer to SC-75 (SOT416) standard mounting conditions. 1999 Apr 20 2 output current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 − − − − − −65 − −65 7 −20 −100 −100 150 +150 150 +150 V V mA mA mW °C °C °C CONDITIONS open emitter open base open collector − − − MIN. MAX. −50 −50 −10 V V V UNIT Philips Semiconductors Product specification PNP resistor-equipped transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SC-75 (SOT416) standard mounting conditions. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO ICEO IEBO hFE VCEsat Vi(off) Vi(on) R1 R2 ------R1 Cc PARAMETER collector cut-off current collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage input-off voltage input-on voltage input resistor resistor ratio collector capacitance IE = ie = 0; VCB = −10 V; f = 1 MHz CONDITIONS IE = 0; VCB = −50 V IB = 0; VCE = −30 V IB = 0; VCE = −30 V; Tj = 150 °C IC = 0; VEB = −5 V IC = −10 mA; VCE = −5 V IC = −10 mA; IB = −0.5 mA IC = −100 µA; VCE = −5 V IC = −20 mA; VCE = −0.3 V MIN. − − − − 50 − − −2.5 3.3 1.7 − PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 PDTA143XE VALUE 833 UNIT K/W TYP. − − − − − − − − 4.7 2.1 − MAX. −100 −1 −50 −0.6 − −150 −0.3 − 6.1 2.6 3 UNIT nA µA µA mA mV V V kΩ pF 1999 Apr 20 3 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA143XE 103 handbook, halfpage hFE (2) (1) MGR818 −103 handbook, halfpage MGR821 VCEsat (mV) 102 (3) −102 (1) (3) 10 (2) 1 −10−1 −1 −10 IC (mA) −102 −10 −1 −10 IC (mA) −102 VCE = −5 V. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C. IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C. F.


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