PDTA144EEF

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA144EEF PNP resistor-equipped transistor Preliminary specification 1999 Apr 20 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor FEATURES Built-in bias resistors R1 and R2 (typ. 47 kΩ each) Simplification of circuit design Reduces number of components and board space. APPLICATIONS Especially suitable for space reduction in interface and driver circuits Inverter circuit configurations without use of external resistors. DESCRIPTION PNP resistor-equipped transistor in an SC-89 (SOT490) plastic package. PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground collector/output MGA893 - 1 PDTA144EEF handbook, halfpage 3 R1 1 R2 3 1 Top view 2 MAM413 2 Fig.1 Simplified outline (SC-89; SOT490) and symbol. MARKING TYPE NUMBER 3 2 1 MARKING CODE 07 PDTA144EEF Fig.2 Equivalent inverter symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO VI PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Note 1. Refer to SC-89 (SOT490) standard mounting conditions. output current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 − − − − − −65 − −65 10 −40 −100 −100 250 +150 150 +150 V V mA mA mW °C °C °C CONDITIONS open emitter open base open collector − − − MIN. ...