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PDTA144WU

NXP

PNP resistor-equipped transistor

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTA144WU PNP resistor-equipped transistor Product specificat...


NXP

PDTA144WU

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Description
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTA144WU PNP resistor-equipped transistor Product specification Supersedes data of 1998 May 19 1999 May 25 Philips Semiconductors Product specification PNP resistor-equipped transistor FEATURES Built-in bias resistors R1 and R2 (typ. 47 kΩ and 22 kΩ respectively) Simplification of circuit design Reduces number of components and board space. APPLICATIONS Especially suitable for space reduction in interface and driver circuits Inverter circuit configurations without use of external resistors. DESCRIPTION PNP resistor-equipped transistor in a SC-70 (SOT323) plastic package. NPN complement: PDTC144WU. MARKING TYPE NUMBER PDTA144WU Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. 2 MGA893 - 1 k, 4 columns PDTA144WU PINNING PIN 1 2 3 base/input emitter/ground (+) collector/output DESCRIPTION 3 3 R1 1 R2 2 1 Top view 2 MAM135 Fig.1 Simplified outline (SC-70; SOT323) and symbol. MARKING CODE(1) ∗28 1 3 Fig.2 Equivalent inverter symbol. 1999 May 25 2 Philips Semiconductors Product specification PNP resistor-equipped transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO VI PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on ...




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