PDTC114EEF

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC114EEF NPN resistor-equipped transistor Product specification Supersedes data of 1998 Nov 11 1999 May 31 Philips Semiconductors Product specification NPN resistor-equipped transistor FEATURES Power dissipation comparable to SOT23 Built-in bias resistors R1 and R2 (typ. 10 kΩ each) Simplification of circuit design Reduces number of components and board space. APPLICATIONS Especially suitable for space reduction in interface and driver circuits Inverter circuit configurations without use of external resistors. DESCRIPTION NPN resistor-equipped transistor encapsulated in an ultra small plastic SMD SC-89 (SOT490) package. PNP complement: PDTA114EEF. PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground collector/output 1 2 MGA893 - 1 PDTC114EEF handbook, halfpage 3 R1 1 R2 3 1 Top view 2 MAM412 2 Fig.1 Simplified outline (SC-89; SOT490) and symbol. MARKING TYPE NUMBER PDTC114EEF MARKING CODE 09 3 Fig.2 Equivalent inverter symbol. QUICK REFERENCE DATA SYMBOL VCEO IO ICM Ptot hFE R1 R2 -----R1 PARAMETER collector-emitter voltage output current (DC) peak collector current total power dissipation DC current gain input resistor resistor ratio Tamb ≤ 25 °C IC = 5 mA; VCE = 5 V CONDITIONS open base − − − − 30 7 0.8 MIN. − − − − − 10 1 TYP. MAX. 50 100 100 250 − 13 1.2 kΩ UNIT V mA mA mW 1999 May 31 2 Philips Semiconductors Product specification NPN resistor-equipped transistor LIMITING VALUES In accordance ...