PDTC114TK

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 PDTC114TK NPN resistor-equipped transistor Product specification Supersedes data of 1997 May 28 File under Discrete Semiconductors, SC04 1998 May 19 Philips Semiconductors Product specification NPN resistor-equipped transistor FEATURES Built-in bias resistor R1 (typ. 10 kΩ) Simplification of circuit design Reduces number of components and board space. APPLICATIONS Especially suitable for space reduction in interface and driver circuits Inverter circuit configurations without use of an external resistor. DESCRIPTION NPN resistor-equipped transistor in an SC-59 plastic package. PNP complement: PDTA114TK. 1 3 2 handbook, halfpage PDTC114TK 3 3 R1 1 2 1 Top view 2 MAM290 Fig.1 Simplified outline (SC-59) and symbol. MARKING TYPE NUMBER PDTC114TK MARKING CODE 24 PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground collector/output MGA893 - 1 Fig.2 Equivalent inverter symbol. QUICK REFERENCE DATA SYMBOL VCEO IO ICM Ptot hFE R1 PARAMETER collector-emitter voltage output current (DC) peak collector current total power dissipation DC current gain input resistor Tamb ≤ 25 °C IC = 1 mA; VCE = 5 V CONDITIONS open base − − − − 200 7 MIN. − − − − − 10 TYP. MAX. 50 100 100 250 − 13 kΩ UNIT V mA mA mW 1998 May 19 2 Philips Semiconductors Product specification NPN resistor-equipped transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IO ICM Ptot ...