DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PDTC123ET NPN resistor-equipped transistor
Product specificat...
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PDTC123ET
NPN resistor-equipped
transistor
Product specification Supersedes data of 1998 May 08 1999 May 21
Philips Semiconductors
Product specification
NPN resistor-equipped
transistor
FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 kΩ each) Simplification of circuit design Reduces number of components and board space.
k, 4 columns
PDTC123ET
3 3 R1 1 R2 2 1 2
MAM097
APPLICATIONS Especially suitable for space reduction in interface and driver circuits Inverter circuit configurations without use of external resistors. DESCRIPTION
NPN resistor-equipped
transistor in a SOT23 plastic package.
PNP complement: PDTA123ET.
Top view
Fig.1 Simplified outline (SOT23) and symbol. PINNING PIN 1 2 3 MARKING
2
DESCRIPTION base/input emitter/ground collector/output
1 3
TYPE NUMBER PDTC123ET Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia.
MARKING CODE(1) ∗26
MGA893 - 1
Fig.2 Equivalent inverter symbol.
1999 May 21
2
Philips Semiconductors
Product specification
NPN resistor-equipped
transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO VI PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Note 1.
Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Transistor mounted on an FR4 printed-circuit board. CHAR...