PDTC123JT

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC123JT NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 08 1999 May 18 Philips Semiconductors Product specification NPN resistor-equipped transistor FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 kΩ and 47 kΩ respectively) Simplification of circuit design Reduces number of components and board space. k, 4 columns PDTC123JT 3 3 APPLICATIONS Especially suitable for space reduction in interface and driver circuits Inverter circuit configurations without use of external resistors. DESCRIPTION NPN resistor-equipped transistor in a SOT23 plastic package. 1 Top view 2 MAM097 R1 1 R2 2 Fig.1 Simplified outline (SOT23) and symbol. MARKING TYPE NUMBER PDTC123JT Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. PINNING PIN 1 2 3 base/input emitter/ground collector/output Fig.2 Equivalent inverter symbol. DESCRIPTION 1 2 MGA893 - 1 MARKING CODE(1) ∗25 3 1999 May 18 2 Philips Semiconductors Product specification NPN resistor-equipped transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO VI PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS ...