PDTC124EE

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC124EE NPN resistor-equipped transistor Product specification Supersedes data of 1997 Jul 11 File under Discrete Semiconductors, SC04 1998 Jul 31 Philips Semiconductors Product specification NPN resistor-equipped transistor FEATURES Built-in bias resistors R1 and R2 (typ. 22 kΩ each) Simplification of circuit design Reduces number of components and board space. APPLICATIONS Especially suitable for space reduction in interface and driver circuits Inverter circuit configurations without use of external resistors. Fig.1 DESCRIPTION NPN resistor-equipped transistor in an SC-75; SOT416 plastic package. PNP complement: PDTA124EE. 1 3 2 MGA893 - 1 PDTC124EE handbook, halfpage 3 R1 1 R2 3 1 Top view 2 MAM346 2 Simplified outline (SC-75; SOT416) and symbol. MARKING TYPE NUMBER PDTC124EE MARKING CODE 06 PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground collector/output Fig.2 Equivalent inverter symbol. QUICK REFERENCE DATA SYMBOL VCEO IO ICM Ptot hFE R1 R2 -----R1 PARAMETER collector-emitter voltage output current (DC) peak collector current total power dissipation DC current gain input resistor resistor ratio Tamb ≤ 25 °C IC = 5 mA; VCE = 5 V CONDITIONS open base − − − − 60 15.4 0.8 MIN. − − − − − 22 1 TYP. MAX. 50 100 100 150 − 28.6 1.2 kΩ UNIT V mA mA mW 1998 Jul 31 2 Philips Semiconductors Product specification NPN resistor-equipped transistor LIMITING VALUES In accordance with the Absolute Maximum Ra...