DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D088
PDTC124ET NPN resistor-equipped transistor
Product specificati...
DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D088
PDTC124ET
NPN resistor-equipped
transistor
Product specification Supersedes data of 1998 May 08 1999 Apr 16
Philips Semiconductors
Product specification
NPN resistor-equipped
transistor
FEATURES Built-in bias resistors R1 and R2 (typ. 22 kΩ each) Simplification of circuit design Reduces number of components and boardspace. APPLICATIONS Especially suitable for space reduction in interface and driver circuits Inverter circuit configurations without use of external resistors. DESCRIPTION
NPN resistor-equipped
transistor in a SOT23 plastic package.
PNP complement: PDTA124ET.
1 3 2
1 Top view 2
MAM097
PDTC124ET
handbook, 4 columns
3 3 R1 1 R2 2
Fig.1 Simplified outline (SOT23) and symbol.
MARKING TYPE NUMBER PDTC124ET Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) ∗17
PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground collector/output
MGA893 - 1
Fig.2
Equivalent inverter symbol.
1999 Apr 16
2
Philips Semiconductors
Product specification
NPN resistor-equipped
transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO VI PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Note 1.
Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Transistor mounted on an FR4 printed-circuit board. CH...