DISCRETE SEMICONDUCTORS
DATA SHEET
M3D425
PDTC124XEF NPN resistor-equipped transistor
Preliminary specification Supersedes data of 1998 Nov 11 1999 May 18
Philips Semiconductors
Preliminary specification
NPN resistor-equipped transistor
FEATURES • Power dissipation comparable to SOT23 • Built-in bias resistors R1 and R2 (typ. 22 kΩ and 47 kΩ respectively) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space reduction in interface and driver circuits • Inverter circuit configurations without use of external resistors. Fig.1 DESCRIPTION NPN resistor-equipped transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. PNP complement: PDTA124XEF. MARKING TYPE NUMBER PDTC124XEF PINNING PIN 1 2 3 base/input emitter/ground collector/output DESCRIPTION MARKING CODE 32
2
MGA893 - 1
PDTC124XEF
handbook, halfpage
3 R1 1 R2
3
1 Top view
2
MAM412
2
Simplified outline (SC-89; SOT490) and symbol.
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