PDTC124XEF

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC124XEF NPN resistor-equipped transistor Preliminary specification Supersedes data of 1998 Nov 11 1999 May 18 Philips Semiconductors Preliminary specification NPN resistor-equipped transistor FEATURES Power dissipation comparable to SOT23 Built-in bias resistors R1 and R2 (typ. 22 kΩ and 47 kΩ respectively) Simplification of circuit design Reduces number of components and board space. APPLICATIONS Especially suitable for space reduction in interface and driver circuits Inverter circuit configurations without use of external resistors. Fig.1 DESCRIPTION NPN resistor-equipped transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. PNP complement: PDTA124XEF. MARKING TYPE NUMBER PDTC124XEF PINNING PIN 1 2 3 base/input emitter/ground collector/output DESCRIPTION MARKING CODE 32 2 MGA893 - 1 PDTC124XEF handbook, halfpage 3 R1 1 R2 3 1 Top view 2 MAM412 2 Simplified outline (SC-89; SOT490) and symbol. 1 3 Fig.2 Equivalent inverter symbol. 1999 May 18 2 Philips Semiconductors Preliminary specification NPN resistor-equipped transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO VI PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Note 1. Refer to SC-89 (SOT490) standard mounting conditions. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer t...