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PDTC143E Dataheets PDF



Part Number PDTC143E
Manufacturers NXP
Logo NXP
Description NPN resistor-equipped transistor
Datasheet PDTC143E DatasheetPDTC143E Datasheet (PDF)

PDTC143E series NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 4.7 k Rev. 10 — 8 December 2011 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor (RET) family in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package NXP PDTC143EE SOT416 PDTC143EM SOT883 PDTC143ET SOT23 PDTC143EU SOT323 JEITA SC-75 SC-101 SC-70 JEDEC PNP complement - PDTA143EE - PDTA143EM TO-236AB PDTA143ET - PDTA143EU .

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PDTC143E series NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 4.7 k Rev. 10 — 8 December 2011 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor (RET) family in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package NXP PDTC143EE SOT416 PDTC143EM SOT883 PDTC143ET SOT23 PDTC143EU SOT323 JEITA SC-75 SC-101 SC-70 JEDEC PNP complement - PDTA143EE - PDTA143EM TO-236AB PDTA143ET - PDTA143EU Package configuration ultra small leadless ultra small small very small 1.2 Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place costs  AEC-Q101 qualified 1.3 Applications  Digital applications in automotive and industrial segments  Control of IC inputs  Cost-saving alternative for BC847/857 series in digital applications  Switching loads 1.4 Quick reference data Table 2. Symbol VCEO IO R1 R2/R1 Quick reference data Parameter collector-emitter voltage output current bias resistor 1 (input) bias resistor ratio Conditions open base Min Typ Max Unit - - 50 V - - 100 mA 3.3 4.7 6.1 k 0.8 1 1.2 NXP Semiconductors PDTC143E series NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 4.7 k 2. Pinning information Table 3. Pinning Pin Description SOT23; SOT323; SOT416 1 input (base) 2 GND (emitter) 3 output (collector) SOT883 1 2 3 input (base) GND (emitter) output (collector) Simplified outline Graphic symbol 3 12 006aaa144 R1 1 3 R2 2 sym007 1 3 2 Transparent top view R1 1 3 R2 2 sym007 3. Ordering information Table 4. Ordering information Type number Package Name Description Version PDTC143EE SC-75 plastic surface-mounted package; 3 leads SOT416 PDTC143EM SC-101 leadless ultra small plastic package; 3 solder lands; SOT883 body 1.0  0.6  0.5 mm PDTC143ET - plastic surface-mounted package; 3 leads SOT23 PDTC143EU SC-70 plastic surface-mounted package; 3 leads SOT323 4. Marking Table 5. Marking codes Type number PDTC143EE PDTC143EM PDTC143ET PDTC143EU [1] * = placeholder for manufacturing site code Marking code[1] 02 E1 *02 *02 PDTC143E_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 10 — 8 December 2011 © NXP B.V. 2011. All rights reserved. 2 of 17 NXP Semiconductors PDTC143E series NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 4.7 k 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min VCBO VCEO VEBO VI collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive open emitter open base open collector - - negative - IO output current - ICM peak collector current single pulse; tp  1 ms - Ptot total power dissipation Tamb  25 C PDTC143EE (SOT416) [1][2] - PDTC143EM (SOT883) [2][3] - PDTC143ET (SOT23) [1] - PDTC143EU (SOT323) [1] - Tj Tamb Tstg junction temperature ambient temperature storage temperature 65 65 Max Unit 50 V 50 V 10 V +30 V 10 V 100 mA 100 mA 150 250 250 200 150 +150 +150 mW mW mW mW C C C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. [3] Device mounted on an FR4 PCB with 70 m copper strip line, standard footprint. PDTC143E_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 10 — 8 December 2011 © NXP B.V. 2011. All rights reserved. 3 of 17 NXP Semiconductors PDTC143E series NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 4.7 k 300 Ptot (mW) 200 100 (1) (2) (3) 006aac778 0 -75 -25 25 75 125 175 Tamb (°C) (1) SOT23; FR4 PCB, standard footprint SOT883; FR4 PCB with 70 m copper strip line, standard footprint (2) SOT323; FR4 PCB, standard footprint (3) SOT416; FR4 PCB, standard footprint Fig 1. Power derating curves 6. Thermal characteristics Table 7. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient PDTC143EE (SOT416) PDTC143EM (SOT883) PDTC143ET (SOT23) PDTC143EU (SOT323) Conditions in free air Min Typ Max Unit [1][2] - - 830 K/W [2][3] - - 500 K/W [1] - - 500 K/W [1] - - 625 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. [3] Device mounted on an FR4 PCB with 70 m copper strip line, standard footprint. PDTC143E_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 10 — 8 December 2011 © NXP B.V. 2011. All rights reserved. 4 of 17 NXP Semiconductors PDTC143E series NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 4.7 k 103 duty cycle = 1 Zth(j-a) (K/W) 102 0.75 0.33 0.5 0.2 0.1 0.05 0.02 0.01 10 0 006aa.


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