PDTC143EK

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 PDTC143EK NPN resistor-equipped transistor Product specification Supersedes data of 1997 Jun 16 File under Discrete Semiconductors, SC04 1998 May 18 Philips Semiconductors Product specification NPN resistor-equipped transistor FEATURES Built-in bias resistors R1 and R2 (typ. 4.7 kΩ each) Simplification of circuit design Reduces number of components and board space. APPLICATIONS Especially suitable for space reduction in interface and driver circuits Inverter circuit configurations without use of external resistors. DESCRIPTION NPN resistor-equipped transistor in an SC-59 plastic package. PNP complement: PDTA143EK. PINNING MGA893 - 1 PDTC143EK 3 3 R1 1 R2 2 1 Top view 2 MAM284 Fig.1 Simplified outline (SC-59) and symbol. MARKING TYPE NUMBER PDTC143EK 2 1 3 MARKING CODE 02 PIN 1 2 3 DESCRIPTION base/input emitter/ground collector/output Fig.2 Equivalent inverter symbol. QUICK REFERENCE DATA SYMBOL VCEO IO ICM Ptot hFE R1 R2 ------R1 PARAMETER collector-emitter voltage output current (DC) peak collector current total power dissipation DC current gain input resistor resistor ratio Tamb ≤ 25 °C IC = 10 mA; VCE = 5 V CONDITIONS open base − − − − 30 3.3 0.8 MIN. − − − − − 4.7 1 TYP. MAX. 50 100 100 250 − 6.1 1.2 kΩ UNIT V mA mA mW 1998 May 18 2 Philips Semiconductors Product specification NPN resistor-equipped transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134...