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PDTC143XT Dataheets PDF



Part Number PDTC143XT
Manufacturers NXP
Logo NXP
Description NPN resistor-equipped transistor
Datasheet PDTC143XT DatasheetPDTC143XT Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC143XT NPN resistor-equipped transistor Product specification 1999 Apr 20 Philips Semiconductors Product specification NPN resistor-equipped transistor FEATURES • Built-in bias resistors R1 and R2 (typ. 4.7 kΩ and 10 kΩ respectively) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space reduction in interface and driver circuits • Inverter circuit configuratio.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC143XT NPN resistor-equipped transistor Product specification 1999 Apr 20 Philips Semiconductors Product specification NPN resistor-equipped transistor FEATURES • Built-in bias resistors R1 and R2 (typ. 4.7 kΩ and 10 kΩ respectively) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space reduction in interface and driver circuits • Inverter circuit configurations without use of external resistors. DESCRIPTION NPN resistor-equipped transistor in a SOT23 plastic package. PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground collector/output Fig.2 Equivalent inverter symbol. 1 2 MGA893 - 1 PDTC143XT handbook, 4 columns 3 3 R1 1 R2 2 1 2 MAM097 Top view Fig.1 Simplified outline (SOT23) and symbol. MARKING TYPE NUMBER 3 MARKING CODE(1) ∗32 PDTC143XT Note 1. ∗ = p: Made in Hong Kong. ∗ = t: Made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO VI PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Note 1. Refer to SOT23 standard mounting conditions. 1999 Apr 20 2 output current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 − − − − − −65 − −65 20 −7 100 100 250 +150 150 +150 V V mA mA mW °C °C °C CONDITIONS open emitter open base open collector − − − MIN. MAX. 50 50 10 V V V UNIT Philips Semiconductors Product specification NPN resistor-equipped transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOT23 standard mounting conditions. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO ICEO IEBO hFE VCEsat Vi(off) Vi(on) R1 R2 ------R1 Cc PARAMETER collector cut-off current collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage input-off voltage input-on voltage input resistor resistor ratio collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz CONDITIONS IE = 0; VCB = 50 V IB = 0; VCE = 30 V IB = 0; VCE = 30 V; Tj = 150 °C IC = 0; VEB = 5 V IC = 10 mA; VCE = 5 V IC = 10 mA; IB = 0.5 mA IC = 100 µA; VCE = 5 V IC = 20 mA; VCE = 0.3 V MIN. − − − − 50 − − 2.5 3.3 1.7 − PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 PDTC143XT VALUE 500 UNIT K/W TYP. − − − − − − − − 4.7 2.1 − MAX. 100 1 50 600 − 100 0.3 − 6.1 2.6 2.5 UNIT nA µA µA µA mV V V kΩ pF 1999 Apr 20 3 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143XT 103 handbook, halfpage hFE (1) MGR814 103 handbook, halfpage MGR815 (2) VCEsat (mV) 102 (3) 102 (1) (2) 10 (3) 1 10−1 1 10 IC (mA) 102 10 1 10 IC (mA) 102 VCE = 5 V. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C. IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C. Fig.3 DC current gain as a function of collector current; typical values. Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. handbook, halfpage 10 MGR816 102 handbook, halfpage Vi(on) MGR817 Vi(off) (V) (V) 10 1 (1) (2) (3) (1) (2) 1 (3) 10−1 10−2 10−1 1 IC (mA) 10 10−1 10−1 1 10 IC (mA) 102 VCE = 5 V. (1) Tamb = −40 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. VCE = 0.3 V. (1) Tamb = −40 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Fig.5 Input-off voltage as a function of collector current; typical values. Fig.6 Input-on voltage as a function of collector current; typical values. 1999 Apr 20 4 Philips Semiconductors Product specification NPN resistor-equipped transistor PACKAGE OUTLINE Plastic surface mounted package; 3 leads PDTC143XT SOT23 D B E A X HE v M A 3 Q A A1 1 e1 e bp 2 w M B detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 1999 Apr 20 5 Philips Semiconductors Product specification NPN resistor-equipped transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values PDTC143XT This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure.


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