DISCRETE SEMICONDUCTORS
DATA SHEET
M3D173
PDTC144EE NPN resistor-equipped transistor
Product specification Supersedes ...
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D173
PDTC144EE
NPN resistor-equipped
transistor
Product specification Supersedes data of 1997 Jul 03 File under Discrete Semiconductors, SC04 1998 Jul 16
Philips Semiconductors
Product specification
NPN resistor-equipped
transistor
FEATURES Built-in bias resistors R1 and R2 (typ. 47 kΩ each) Simplification of circuit design Reduces number of components and board space. APPLICATIONS Especially suitable for space reduction in interface and driver circuits Inverter circuit configurations without use of external resistors. DESCRIPTION
NPN resistor-equipped
transistor in an SC-75 plastic package.
PNP complement: PDTA144EE.
1 3 2
MGA893 - 1
PDTC144EE
handbook, halfpage
3 R1 1 R2
3
1 Top view
2
MAM346
2
Fig.1 Simplified outline (SC-75) and symbol.
MARKING TYPE NUMBER PDTC144EE MARKING CODE 08
PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground collector/output Fig.2
Equivalent inverter symbol.
QUICK REFERENCE DATA SYMBOL VCEO IO ICM Ptot hFE R1 R2 -----R1 PARAMETER collector-emitter voltage output current (DC) peak collector current total power dissipation DC current gain input resistor resistor ratio Tamb ≤ 25 °C IC = 5 mA; VCE = 5 V CONDITIONS open base − − − − 80 33 0.8 MIN. − − − − − 47 1 TYP. MAX. 50 100 100 150 − 61 1.2 kΩ UNIT V mA mA mW
1998 Jul 16
2
Philips Semiconductors
Product specification
NPN resistor-equipped
transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134)...