Document
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D173
PDTC144EE NPN resistor-equipped transistor
Product specification Supersedes data of 1997 Jul 03 File under Discrete Semiconductors, SC04 1998 Jul 16
Philips Semiconductors
Product specification
NPN resistor-equipped transistor
FEATURES • Built-in bias resistors R1 and R2 (typ. 47 kΩ each) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space reduction in interface and driver circuits • Inverter circuit configurations without use of external resistors. DESCRIPTION NPN resistor-equipped transistor in an SC-75 plastic package. PNP complement: PDTA144EE.
1 3 2
MGA893 - 1
PDTC144EE
handbook, halfpage
3 R1 1 R2
3
1 Top view
2
MAM346
2
Fig.1 Simplified outline (SC-75) and symbol.
MARKING TYPE NUMBER PDTC144EE MARKING CODE 08
PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground collector/output Fig.2
Equivalent inverter symbol.
QUICK REFERENCE DATA SYMBOL VCEO IO ICM Ptot hFE R1 R2 -----R1 PARAMETER collector-emitter voltage output current (DC) peak collector current total power dissipation DC current gain input resistor resistor ratio Tamb ≤ 25 °C IC = 5 mA; VCE = 5 V CONDITIONS open base − − − − 80 33 0.8 MIN. − − − − − 47 1 TYP. MAX. 50 100 100 150 − 61 1.2 kΩ UNIT V mA mA mW
1998 Jul 16
2
Philips Semiconductors
Product specification
NPN resistor-equipped transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO VI PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO ICEO IEBO hFE VCEsat Vi(off) Vi(on) R1 R2 -----R1 Cc PARAMETER collector cut-off current collector cut-off current emitter cut-off current DC current gain input-off voltage input-on voltage input resistor resistor ratio collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz CONDITIONS IE = 0; VCB = 50 V IB = 0; VCE = 30 V IB = 0; VCE = 30 V; Tj = 150 °C IC = 0; VEB = 5 V IC = 5 mA; VCE = 5 V IC = 100 µA; VCE = 5 V IC = 2 mA; VCE = 0.3 V MIN. − − − − 80 − − 3 33 0.8 − PARAMETER CONDITIONS output current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 − − − − − −65 − −65 CONDITIONS open emitter open base open collector − − − MIN.
PDTC144EE
MAX. 50 50 10 +40 −10 100 100 150 +150 150 +150 V V V V V
UNIT
mA mA mW °C °C °C
VALUE 833
UNIT K/W
thermal resistance from junction to ambient note 1
TYP. − − − − − − 1.2 1.6 47 1 −
MAX. 100 1 50 90 − 150 0.8 − 61 1.2 2.5
UNIT nA µA µA µA mV V V kΩ
collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA
pF
1998 Jul 16
3
Philips Semiconductors.