PDTC144WU

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTC144WU NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 19 1999 May 25 Philips Semiconductors Product specification NPN resistor-equipped transistor FEATURES Built-in bias resistors R1 and R2 (typ. 47 kΩ and 22 kΩ respectively) Simplification of circuit design Reduces number of components and board space. APPLICATIONS Especially suitable for space reduction in interface and driver circuits Inverter circuit configurations without use of external resistors. DESCRIPTION NPN resistor-equipped transistor in a SC-70 (SOT323) plastic package. PNP complement: PDTA144WU. MARKING TYPE NUMBER PDTC144WU Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) ∗20 1 2 MGA893 - 1 1 Top view 2 MAM134 PDTC144WU PINNING PIN 1 2 3 base/input emitter/ground collector/output DESCRIPTION dbook, 4 columns 3 3 R1 1 R2 2 Fig.1 Simplified outline (SC-70; SOT323) and symbol. 3 Fig.2 Equivalent inverter symbol. 1999 May 25 2 Philips Semiconductors Product specification NPN resistor-equipped transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO VI PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on...