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LMA183

Filtronic Compound Semiconductors

2-18 GHz MESFET Amplifier

Filtronic Solid State Features • • • • • • • • • • 5.5dB Typical Noise Figure 7.5dB Typical Gain 15dBm Saturated Output ...


Filtronic Compound Semiconductors

LMA183

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Description
Filtronic Solid State Features 5.5dB Typical Noise Figure 7.5dB Typical Gain 15dBm Saturated Output Power 12dB Input/Output Return Loss Typical 2-18GHz Frequency Bandwidth +4 Volts Dual Bias Supply DC Decoupled RF Output Chip Size : 1.62mmX2.38mm (.064”X.094”) Chip Thickness : 100µm 2 Pad Dimension : 100µm . 2-18 GHz MESFET Amplifier LMA183 Description The Filtronic LMA183 is a GaAs monolithic distributive amplifier which operates from 2 to 18GHz. This LMA183 amplifier produces a typical gain of 7.5dB and a noise figure of less than 5.5dB. The LMA183 is suitable for gain block, low noise and driver amplifier applications. DC decoupled output RF port. Ground is provided to the circuitry through vias to the backside metallization. Electrical Specifications at Ta=25°C (VDD=+4.0V, Zin=Zout=50Ω) Symbol BW S21 Idss ∆S21 NF RLin RLout S12 P-1dB Limit Typ. 7.5 100 ±.5 5.5 -14 -14 -16 12 Parameter Operating Bandwidth Small Signal Gain Drain Current at Saturation Small Signal Gain Flatness Noise Figure Input Return Loss Output Return Loss Reverse Isolation 1-dB Gain Compression Power Test Conditions VD=4V, Ids=.5Idss Min. 2 6 60 Max. 18 200 ±1 7 -10 -10 @ .5Idss -13 10 Units GHz dB mA dB dB dB dB dB dBm Absolute Maximum Ratings Symbol Vdd Idd Pin Pt Tch Tstg Tmax. Parameter/ Conditions Drain Supply Voltage Total Drain Current RF Input Power Power Dissipation Operating Channel Temperature Storage Temperature Max. Assembly Temp. (1 min. max.) Min. Max. 8 2...




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