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LMA444

Filtronic Compound Semiconductors

38GHz Medium Power Amplifier

Filtronic Solid State 38GHz Medium Power Amplifier LMA444 PRELIMINARY Data Sheet Typical Specifications • • • • • • •...


Filtronic Compound Semiconductors

LMA444

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Description
Filtronic Solid State 38GHz Medium Power Amplifier LMA444 PRELIMINARY Data Sheet Typical Specifications +21dBm Output Power @ 1dB Gain Com pression 15dB Typical Gain 10dB Input/Output Return Loss +5Volts Dual Bias Supply DC Decoupled RF Input and Output Chip Size : 0.95mmX2mm (.038”X.079”) Chip Thickness : 100µm (.004”) 2 Pad Dim ension : 100X100µm Description The LMA444 is a m edium power PHEMT am plifier that operates from 37 to 40GHz. This 3-stage am plifier provides 15dB linear power gain with 1dB gain com pression power output of greater than +21dBm . The LMA444 Millim eter W ave point to point and point to m ulti-point radio link applications. Ground is provided to the circuitry through vias to the backside m etallization. Electrical Specifications at Ta=25°C (VDD=+5V, ZIN=ZOUT=50Ω) Lim it Typ. 15 360 ±1 -10 -10 -40 19 20 Sym bol BW S21 IDSS ∆S21 RLIN RLOUT S12 P-1dB PSAT Param eter Operating Bandwidth Sm all Signal Gain Drain Current at Saturation Sm all Signal Gain Flatness Input Return Loss Output Return Loss Reverse Isolation 1-dB Gain Com pression Power Saturated Output Power Test Conditions @ .75 IDSS @ IDSS Min. 37 14 300 Max. 40 450 ±2 @ .75 IDSS 17 Units GHz dB mA dB dB dB dB dBm dBm Absolute Maximum Ratings Sym bol VDD IDD PIN Pt TCH TSTG TMAX Param eter/Conditions Drain Supply Voltage Total Drain Current RF Input Power Power Dissipation Operating Channel Tem perature Storage Tem perature Max. Assem bly Tem p. (1 m in. m ax.) Min....




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