Operational Amplifier. LMH6626MA Datasheet

LMH6626MA Amplifier. Datasheet pdf. Equivalent

LMH6626MA Datasheet
Recommendation LMH6626MA Datasheet
Part LMH6626MA
Description Single/Dual Ultra Low Noise Wideband Operational Amplifier
Feature LMH6626MA; LMH6624/LMH6626 Single/Dual Ultra Low Noise Wideband Operational Amplifier May 2003 LMH6624/LMH662.
Manufacture National Semiconductor
Datasheet
Download LMH6626MA Datasheet




National Semiconductor LMH6626MA
May 2003
LMH6624/LMH6626
Single/Dual Ultra Low Noise Wideband Operational
Amplifier
General Description
The LMH6624/LMH6626 offer wide bandwidth (1.5GHz for
single, 1.3GHz for dual) with very low input noise (0.92nV/
, 2.3pA/
) and ultra low dc errors (100µV VOS,
±0.1µV/˚C drift) providing very precise operational amplifiers
with wide dynamic range. This enables the user to achieve
closed-loop gains of greater than 10, in both inverting and
non-inverting configurations.
The LMH6624 (single) and LMH6626’s (dual) traditional volt-
age feedback topology provide the following benefits: bal-
anced inputs, low offset voltage and offset current, very low
offset drift, 81dB open loop gain, 95dB common mode rejec-
tion ratio, and 88dB power supply rejection ratio.
The LMH6624/LMH6626 operate from ± 2.5V to ± 6V in
dual supply mode and from +5V to +12V in single supply
configuration.
LMH6624 is offered in SOT23-5 and SOIC-8 packages.
The LMH6626 is offered in SOIC-8 and MSOP-8 packages.
Features
VS = ±6V, TA = 25˚C, AV = 20, (Typical values unless
specified)
n Gain bandwidth (LMH6624)
1.5GHz
n Input voltage noise
0.92nV/
n Input offset voltage (limit over temp)
700uV
n Slew rate
350V/µs
n Slew rate (AV = 10)
n HD2 @ f = 10MHz, RL = 100
n HD3 @ f = 10MHz, RL = 100
n Supply voltage range (dual supply)
400V/µs
−63dBc
−80dBc
±2.5V to ±6V
n Supply voltage range (single supply)
+5V to +12V
n Improved replacement for the CLC425
(LMH6624)
n Stable for closed loop |AV| 10
Applications
n Instrumentation sense amplifiers
n Ultrasound pre-amps
n Magnetic tape & disk pre-amps
n Wide band active filters
n Professional Audio Systems
n Opto-electronics
n Medical diagnostic systems
Connection Diagrams
5-Pin SOT23
8−Pin SOIC
8−Pin SOIC/MSOP
Top View
20058951
Top View
20058952
Top View
20058961
© 2003 National Semiconductor Corporation DS200589
www.national.com



National Semiconductor LMH6626MA
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Wave Soldering (10 sec.)
Storage Temperature Range
Junction Temperature (Note 3), (Note 4)
260˚C
−65˚C to +150˚C
+150˚C
ESD Tolerance
Human Body Model
Machine Model
VIN Differential
Supply Voltage (V+ - V)
Voltage at Input pins
Soldering Information
Infrared or Convection (20 sec.)
2000V (Note 2)
200V (Note 9)
±1.2V
13.2V
V+ +0.5V, V−0.5V
235˚C
Operating Ratings (Note 1)
Operating Temperature Range
(Note 3), (Note 4)
−40˚C to +125˚C
Package Thermal Resistance (θJA)(Note 4)
SOIC-8
166˚C/W
SOT23–5
265˚C/W
MSOP-8
235˚C/W
±2.5V Electrical Characteristics
Unless otherwise specified, all limits guaranteed at TA = 25˚C, V+ = 2.5V, V= −2.5V, VCM = 0V, AV = +20, RF = 500, RL =
100. Boldface limits apply at the temperature extremes. See (Note 12).
Symbol
Parameter
Conditions
Min Typ Max
(Note 6) (Note 5) (Note 6)
Units
Dynamic Performance
fCL −3dB BW
SR Slew Rate(Note 8)
tr Rise Time
tf Fall Time
ts Settling Time 0.1%
Distortion and Noise Response
VO = 400mVPP (LMH6624)
VO = 400mVPP (LMH6626)
VO = 2VPP, AV = +20 (LMH6624)
VO = 2VPP, AV = +20 (LMH6626)
VO = 2VPP, AV = +10 (LMH6624)
VO = 2VPP, AV = +10 (LMH6626)
VO = 400mV Step, 10% to 90%
VO = 400mV Step, 10% to 90%
VO = 2VPP (Step)
90
MHz
80
300
290
V/µs
360
340
4.1 ns
4.1 ns
20 ns
en Input Referred Voltage Noise f = 1MHz (LMH6624)
f = 1MHz (LMH6626)
0.92
1.0
nV/
in Input Referred Current Noise
HD2
2nd Harmonic Distortion
HD3
3rd Harmonic Distortion
Input Characteristics
f = 1MHz (LMH6624)
f = 1MHz (LMH6626)
fC = 10MHz, VO = 1VPP, RL 100
fC = 10MHz, VO = 1VPP, RL 100
2.3
pA/
1.8
−60 dBc
−76 dBc
VOS Input Offset Voltage
Average Drift (Note 7)
IOS Input Offset Current
VCM = 0V
VCM = 0V
VCM = 0V
−0.75
−0.95
−1.5
−2.0
−0.25
±0.25
−0.05
+0.75
+0.95
+1.5
+2.0
mV
µV/˚C
µA
Average Drift (Note 7)
IB Input Bias Current
VCM = 0V
VCM = 0V
2 nA/˚C
13 +20 µA
+25
Average Drift (Note 7)
VCM = 0V
RIN
Input Resistance (Note 10)
Common Mode
Differential Mode
12 nA/˚C
6.6 M
4.6 k
CIN Input Capacitance (Note 10) Common Mode
Differential Mode
0.9 pF
2.0
CMRR
Common Mode Rejection
Ratio
Input Referred,
VCM = −0.5 to +1.9V
VCM = −0.5 to +1.75V
87 90
85
dB
www.national.com
2



National Semiconductor LMH6626MA
±2.5V Electrical Characteristics (Continued)
Unless otherwise specified, all limits guaranteed at TA = 25˚C, V+ = 2.5V, V= −2.5V, VCM = 0V, AV = +20, RF = 500, RL =
100. Boldface limits apply at the temperature extremes. See (Note 12).
Symbol
Parameter
Conditions
Min Typ Max
(Note 6) (Note 5) (Note 6)
Units
Transfer Characteristics
AVOL
Large Signal Voltage Gain
Xt Crosstalk Rejection
Output Characteristics
VO Output Swing
(LMH6624)
RL = 100, VO = −1V to +1V
(LMH6626)
RL = 100, VO = −1V to +1V
f = 1MHz (LMH6626)
RL = 100
No Load
75
70
72
67
±1.1
±1.0
±1.4
±1.25
79
79
−75
±1.5
±1.7
dB
dB
V
RO Output Impedance
ISC Output Short Circuit Current
IOUT
Output Current
Power Supply
PSRR
Power Supply Rejection Ratio
f 100KHz
(LMH6624)
Sourcing to Ground
VIN = 200mV (Note 3), (Note 11)
(LMH6624)
Sinking to Ground
VIN = −200mV (Note 3), (Note 11)
(LMH6626)
Sourcing to Ground
VIN = 200mV (Note 3),(Note 11)
(LMH6626)
Sinking to Ground
VIN = −200mV (Note 3),(Note 11)
(LMH6624)
Sourcing, VO = +0.8V
Sinking, VO = −0.8V
(LMH6626)
Sourcing, VO = +0.8V
Sinking, VO = −0.8V
VS = ±2.0V to ±3.0V
90
75
90
75
60
50
60
50
82
80
10
145
145
120
120
100
75
90
m
mA
mA
dB
IS Supply Current (per channel) No Load
11.4
16
18
mA
±6V Electrical Characteristics
Unless otherwise specified, all limits guaranteed at TA = 25˚C, V+ = 6V, V= −6V, VCM = 0V, AV = +20, RF = 500, RL =
100. Boldface limits apply at the temperature extremes. See (Note 12).
Symbol
Parameter
Conditions
Min Typ Max
(Note 6) (Note 5) (Note 6)
Units
Dynamic Performance
fCL −3dB BW
SR Slew Rate (Note 8)
tr Rise Time
VO = 400mVPP (LMH6624)
VO = 400mVPP (LMH6626)
VO = 2VPP, AV = +20 (LMH6624)
VO = 2VPP, AV = +20 (LMH6626)
VO = 2VPP, AV = +10 (LMH6624)
VO = 2VPP, AV = +10 (LMH6626)
VO = 400mV Step, 10% to 90%
95
MHz
85
350
320
V/µs
400
360
3.7 ns
3 www.national.com







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)