LPV3000

Filtronic Solid State FEATURES DRAIN PAD (x4) LP3000/LPV3000 2W Power PHEMT +33.5 dBm Typical Power at 18 GHz 7 dB Typical Power Gain at 18 GHz +30.5 dBm at 3.3V Battery Voltage Low Intermodulation Distortion 45% Power-Added-Efficiency at 18 GHz SOURCE BOND PAD (x2) GATE PAD (x4) DIE SIZE: 28.3 x 16.5 mils (720 x 420 µm) DIE THICKNESS: 2.6 mils (65 µm typ.) BONDING PADS: 1.9 x 2.4 mils (50 x 60 µm typ.) DESCRIPTION AND APPLICATIONS The LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 3000 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for reliable high-power applications. The LP3000 also features Si3N4 passivation and is available with plated source via-holes (LPV 3000) as an option for improved high-frequency performance. Also available in a ceramic flanged package (P100) and ball grid array package. Typical applications include commercial and military high-performance power amplifiers, including SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output amplifiers, and medium-haul digital radio transmitters. The LPV 3000/LP 3000 may be procured in a variety of grades, depending upon specific user requirements. Standard lot screening is patterned after MIL-STD-19500, JANC gra...