FEATURES
VERY HIGH GAIN
hFE≥200@10µA-1mA
TIGHT VBE MATCHING
|VBE1 -VBE1| = 0.2mV TYP.
HIGH fT
250MHz TYP. @ 1mA
A...
FEATURES
VERY HIGH GAIN
hFE≥200@10µA-1mA
TIGHT VBE MATCHING
|VBE1 -VBE1| = 0.2mV TYP.
HIGH fT
250MHz TYP. @ 1mA
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25°C (unless otherwise noted)
IC
Collector Current
10mA
Maximum Temperatures
Storage Temperature
-55° to +150°C
Operating Junction Temperature Maximum Power Dissipation
-55° to +150°C ONE SIDE BOTH SIDES
Device Dissipation @ Free Air
250mW 500mW
Linear Derating Factor
2.3mW/°C 4.3mW/°C
LS310 LS311 LS312 LS313
MONOLITHIC DUAL
NPN
TRANSISTORS
Top View
Top View
SOT-23 6 LEADS TO-71 & TO-78
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL CHARACTERISTICS
LS310 LS311 LS312 LS313
UNITS CONDITIONS
BVCBO BVCEO BVEBO BVCCO
hFE hFE hFE VCE(SAT) ICBO IEBO COBO CC1C2
IC1C2
fT
NF
Collector to Base Voltage
25 45
Collector to Emitter Voltage
25 45
Emitter-Base Breakdown Voltage
6.0 6.0
Collector to Collector Voltage 45 45
DC Current Gain
150 150
DC Current Gain
DC Current Gain
Collector Satu...
