LS846

LS846 Linear Integrated Systems FEATURES ULTRA LOW NOISE LOW GATE LEAKAGE ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation @ +125 °C Maximum Currents Gate Forward Current Maximum Voltages Drain to Source Gate to Source Gate to Drain VDSO = 60V VGSS = 60V VGDS = 60V *For equivalent monolithic dual, see LS843 family. IG(F) = 50mA 350mW -65 to +150 °C -55 to +135 °C 1 LOW NOISE, LOW LEAKAGE SINGLE N-CHANNEL JFET en = 3nV/√Hz IG = 15pA ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) SYMBOL BVGSS VGS(OFF) VGS IDSS IG IG IGSS Yfss Yfs Yoss Yos NF en en CISS CRSS 1. CHARACTERISTIC Gate to Source Breakdown Voltage Gate to Source Pinch-off Voltage Gate to Source Operating Voltage Drain to Source Saturation Current Gate Operating Current Gate Operating Current Reduced VDG Gate to Source Leakage Current Full Conductance Transconductance Full Output Conductance Typical Output Conductance Noise Figure Noise Voltage Noise Voltage Common Source Input Capacitance Common Source Reverse Transfer Cap. MIN 60 1 0.5 1.5 TYP MAX UNITS V 3.5 3.5 V V mA pA pA pA µmho µmho 20 µmho µmho dB nV/√Hz nV/√Hz pF pF 2 0.5 CONDITIONS VDS = 0, ID = 1nA VDS = 15V, ID = 1nA VDS = 15V, ID = 500µA VDG = 15V, VGS = 0 VDG = 15V, ID = 500µA VDG = 3V, ID = 500µA VDG = 15V, VDS = 0 VGD = 15V, VGS = 0, f = 1kHz VDG = 15V, ID = 500µA VDG = 15V, VGS = 0 VDG = 15V, ID ...