MBR1635

MBR1635 - MBR1660 Discrete POWER & Signal Technologies MBR1635 - MBR1660 Features Low power loss, high efficiency. High surge capacity. For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection. .113(2.87) .103(2.62) .594(15.1) .587(14.91) .27(6.86) .23(5.84) .412(10.5) MAX DIA .154(3.91) .148(3.74) .185(4.70) .175(4.44) .055(1.40) .045(1.14) 1 .16(4.06) .14(3.56) 2 Dimensions are in: inches (mm) .56(14.22) .53(13.46) .11(2.79) .10(2.54) TO-220AC .037(0.94) .027(0.68) .205(5.20) .195(4.95) PIN 1 + + PIN 2 CASE Positive CASE .025(0.64) .014(0.35) 16 Ampere Schottky Barrier Rectifiers Absolute Maximum Ratings* Symbol IO if(repetitive) if(surge) PD RθJA RθJL Tstg TJ TA = 25°C unless otherwise noted Parameter Average Rectified Current .375” lead length @ TA = 125°C Peak Repetitive Forward Current (Rated VR , Square Wave, 20 KHz) @ TA = 125°C Peak Forward Surge Current 8.3 ms single half-sine-wave Superimposed on rated load (JEDEC method) Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Storage Temperature Range Operating Junction Temperature Value 16 Units A 32 150 2.0 16.6 60 1.5 -65 to +175 -65 to +150 A A W mW/°C °C/W °C/W °C °C *These ratings are limiting values above which the serviceability ...