MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MBR2060CT/D
SWITCHMODE™ Power Rectifiers
. . . using the...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MBR2060CT/D
SWITCHMODE™ Power Rectifiers
. . . using the
Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: 20 Amps Total (10 Amps Per Diode Leg) Guard–Ring for Stress Protection Low Forward Voltage 150°C Operating Junction Temperature Guaranteed Reverse Avalanche Epoxy Meets UL94, VO at 1/8″ Low Power Loss/High Efficiency High Surge Capacity Low Stored Charge Majority Carrier Conduction
MBR2060CT MBR2070CT MBR2080CT MBR2090CT MBR20100CT
MBR2060CT and MBR20100CT are Motorola Preferred Devices
Mechanical Characteristics: Case: Epoxy, Molded Weight: 1.9 grams (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Shipped 50 units per plastic tube Marking: B2060, B2070, B2080, B2090, B20100
1 2, 4 3
SCHOTTKY BARRIER RECTIFIERS 20 AMPERES 60–100 VOLTS
4
1 2 3
CASE 221A–06 TO–220AB PLASTIC
MAXIMUM RATINGS PER DIODE LEG
MBR Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC = 133°C Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC = 133°C Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Peak Repetitive Reverse Surge Current (2.0 µs, 1.0 kHz) Ope...