MBR2515L

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBR2515L/D Advance Information SWITCHMODE™ Power Rectifier . . . employing the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, low voltage converters, OR’ing diodes, and polarity protection devices. Very Low Forward Voltage (0.28 V Maximum @ 19 Amps, 70°C) Guardring for Stress Protection Highly Stable Oxide Passivated Junction (100°C Operating Junction Temperature) Epoxy Meets UL94, VO at 1/8″ Mechanical Characteristics Case: Epoxy, Molded Weight: 1.9 grams (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Shipped 50 Units Per Plastic Tube Marking: B2515L MAXIMUM RATINGS (Per Leg) Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC = 90°C Peak Repetitive Forward Current, Per Leg (Rated VR, Square Wave, 20 kHz) TC = 90°C Non Repetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Peak Repetitive Reverse Surge Current (2.0 µs, 1.0 kHz) Operating Junction Temperature Storage Temperature Symbol VRRM VRWM VR IF(AV) IFRM IFSM IRRM TJ Tstg MBR251...