Schottky Rectifier. MBR30H100CT Datasheet

MBR30H100CT Rectifier. Datasheet pdf. Equivalent

Part MBR30H100CT
Description Dual Common Cathode High Voltage Schottky Rectifier
Feature MBR30H100CT, MBRF30H100CT, MBRB30H100CT www.vishay.com Vishay General Semiconductor Dual Common C.
Manufacture Vishay Siliconix
Datasheet
Download MBR30H100CT Datasheet

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MBR30H100CT
MBR30H100CT, MBRF30H100CT, MBRB30H100CT
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode High Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
TO-220AB
ITO-220AB
MBR30H100CT
PIN 1
PIN 2
3
2
1
123
MBRF30H100CT
PIN 1
PIN 2
PIN 3
CASE
PIN 3
D2PAK (TO-263AB)
K
2
1
MBRB30H100CT
PIN 1
K
PIN 2
HEATSINK
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
IR
TJ max.
Package
2 x 15 A
100 V
275 A
0.67 V
5.0 μA
175 °C
TO-220AC, ITO-220AC, D2PAK (TO-263AB)
Circuit configuration
Dual common cathode
FEATURES
• Power pack
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB and ITO-220AB package)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters, and
polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, D2PAK (TO-263AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current
(fig.1)
total device
per diode
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode
Peak repetitive reverse surge current per diode
at tp = 2.0 μs, 1 kHz
Voltage rate of change (rated VR)
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min
SYMBOL
VRRM
VRWM
VDC
IF(AV)
IFSM
IRRM
dV/dt
TJ, TSTG
VAC
MBR30H100CT
100
100
100
30
15
275
1.0
10 000
-65 to +175
1500
UNIT
V
A
V/μs
°C
V
Revision: 11-Jun-2018
1 Document Number: 88791
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



MBR30H100CT
MBR30H100CT, MBRF30H100CT, MBRB30H100CT
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum instantaneous forward voltage per diode
Maximum reverse current per diode
VF (1)
IR (2)
IF = 15 A
IF = 15 A
IF = 30 A
IF = 30 A
Rated VR
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width, 40 ms
VALUE
0.82
0.67
0.93
0.80
5.0
6.0
UNIT
V
μA
mA
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR
Typical thermal resistance per diode
RJC
1.9
MBRF
4.6
MBRB
1.9
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
TO-220AB
MBR30H100CT-E3/45
ITO-220AB
MBRF30H100CT-E3/45
TO-263AB
MBRB30H100CT-E3/45
TO-263AB
MBRB30H100CT-E3/81
UNIT WEIGHT (g)
1.85
1.99
1.35
1.35
PACKAGE CODE
45
45
45
81
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Revision: 11-Jun-2018
2 Document Number: 88791
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000





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