MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MBRB20200CT/D
SWITCHMODE™ Power
Dual Schottky Rectifier
...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MBRB20200CT/D
SWITCHMODE™ Power
Dual
Schottky Rectifier
. . . using
Schottky Barrier technology with a platinum barrier metal. This state–of–the–art device is designed for use in high frequency switching power supplies and converters with up to 48 volt outputs. They block up to 200 volts and offer improved
Schottky performance at frequencies from 250 kHz to 5.0 MHz. 200 Volt Blocking Voltage Low Forward Voltage Drop Guardring for Stress Protection and High dv/dt Capability (10,000 V/µs) Dual Diode Construction — Terminals 1 and 3 Must be Connected for Parallel Operation at Full Rating Mechanical Characteristics Case: Epoxy, Molded Weight: 1.7 grams (approximately) 1 Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable 3 Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Shipped 50 units per plastic tube Available in 24 mm Tape and Reel, 800 units per 13″ reel by adding a “T4” suffix to the part number Marking: B20200 MAXIMUM RATINGS (PER LEG)
Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC = 125°C Peak Repetitive Forward Current, Per Leg (Rated VR, Square Wave, 20 kHz) TC = 90°C Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Peak Repetitive Reverse Surge Current (2.0 µs, 1.0...