MBRD1035CTL

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBRD1035CTL/D Advance Information SWITCHMODE™ Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheeling diode and polarity protection diodes. Highly Stable Oxide Passivated Junction Guardring for Stress Protection Matched dual die construction – May be Paralleled for High Current Output High dv/dt Capability Short Heat Sink Tap Manufactured – Not Sheared Very Low Forward Voltage Drop Epoxy Meets UL94, VO at 1/8” MBRD1035CTL SCHOTTKY BARRIER RECTIFIER 10 AMPERES 35 VOLTS 4 1 3 CASE 369A–13 DPAK Mechanical Characteristics: Case: Epoxy, Molded Weight: 0.4 gram (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Shipped in 75 units per plastic tube Available in 16 mm Tape and Reel, 2500 units per Reel, Add “T4’’ to Suffix part # Marking: B1035CL MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TC = 115°C) Peak Repetitive Forward Current (At Rated VR, Square Wav...