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MBRM120E Dataheets PDF



Part Number MBRM120E
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Surface Mount Schottky Power Rectifier
Datasheet MBRM120E DatasheetMBRM120E Datasheet (PDF)

MBRM120E Surface Mount Schottky Power Rectifier POWERMITE® Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced packaging techniques provide for a highly efficient micro miniature, space saving surface mount Rectifier. With its unique heatsink design, the Powermite has the same thermal performance as the SMA while being 50% smaller.

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MBRM120E Surface Mount Schottky Power Rectifier POWERMITE® Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced packaging techniques provide for a highly efficient micro miniature, space saving surface mount Rectifier. With its unique heatsink design, the Powermite has the same thermal performance as the SMA while being 50% smaller in footprint area, and delivering one of the lowest height profiles, < 1.1 mm in the industry. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are ac/dc and dc–dc converters, reverse battery protection, and “Oring” of multiple supply voltages and any other application where performance and size are critical. Features: http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 20 VOLTS CATHODE POWERMITE CASE 457 PLASTIC ANODE • • • • • • • • • • • Low Profile – Maximum Height of 1.1 mm Small Footprint – Footprint Area of 8.45 mm2 Low VF Provides Higher Efficiency and Extends Battery Life Supplied in 12 mm Tape and Reel Low Thermal Resistance with Direct Thermal Path of Die on Exposed Cathode Heat Sink Powermite is JEDEC Registered as DO–216AA Case: Molded Epoxy Epoxy Meets UL94V–0 at 1/8″ Weight: 62 mg (approximately) Device Marking: BCV Lead and Mounting Surface Temperature for Soldering Purposes. 260°C Maximum for 10 Seconds MARKING DIAGRAM Mechanical Characteristics: M BCV BCV M = Device Code = Date Code ORDERING INFORMATION Device Package Shipping 3000/Tape & Reel MAXIMUM RATINGS Please See the Table on the Following Page MBRM120ET1 POWERMITE MBRM120ET3 POWERMITE 12,000/Tape & Reel © Semiconductor Components Industries, LLC, 2001 1 November, 2001 – Rev. 0 Publication Order Number: MBRM120E/D MBRM120E MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TC = 130°C) Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 135°C) Non–Repetitive Peak Surge Current (Non–Repetitive peak surge current, halfwave, single phase, 60 Hz) Storage Temperature Operating Junction Temperature Voltage Rate of Change (Rated VR, TJ = 25°C) Symbol VRRM VRWM VR IO IFRM IFSM Tstg TJ dv/dt Value 20 Unit V 1.0 2.0 50 –65 to 150 –65 to 150 10,000 A A A °C °C V/ms THERMAL CHARACTERISTICS Thermal Resistance – Junction–to–Lead (Anode) (Note 1) Thermal Resistance – Junction–to–Tab (Cathode) (Note 1) Thermal Resistance – Junction–to–Ambient (Note 1) Rtjl Rtjtab Rtja 35 23 277 °C/W 1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 9 and 10. ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 2), See Figure 2 (IF = 0.1 A) (IF = 1.0 A) (IF = 2.0 A) Maximum Instantaneous Reverse Current (Note 2), See Figure 4 (VR = 20 V) (VR = 10 V) (VR = 5.0 V) 2. Pulse Test: Pulse Width ≤ 250 µs, Duty Cycle ≤ 2%. IR VF TJ = 25°C 0.455 0.530 0.595 TJ = 25°C 10 1.0 0.5 TJ = 100°C 0.360 0.455 0.540 TJ = 100°C 1600 500 300 mA V http://onsemi.com 2 MBRM120E iF, INSTANTANEOUS FORWARD CURRENT (AMPS) iF, INSTANTANEOUS FORWARD CURRENT (AMPS) 10 TJ = 150°C TJ = 100°C TJ = 25°C TJ = –40°C 1.0 10 TJ = 150°C TJ = 100°C 1.0 TJ = 25°C 0.1 0.2 0.4 0.6 0.8 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 0.1 0.2 0.4 0.6 0.8 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage IR, MAXIMUM REVERSE CURRENT (AMPS) Figure 2. Maximum Forward Voltage 100E–3 IR, REVERSE CURRENT (AMPS) 10E–3 1E–3 TJ = 150°C TJ = 100°C 100E–3 10E–3 1E–3 TJ = 150°C TJ = 100°C 100E–6 10E–6 1E–6 100E–6 10E–6 1E–6 TJ = 25°C 100E–9 10E–9 0 5.0 TJ = 25°C 100E–9 10E–9 0 5.0 10 15 20 10 15 20 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current http://onsemi.com 3 MBRM120E IO, AVERAGE FORWARD CURRENT (AMPS) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 25 45 65 85 105 SQUARE WAVE Ipk/Io = p Ipk/Io = 5 Ipk/Io = 10 Ipk/Io = 20 dc PFO, AVERAGE DISSIPATION (WATTS) FREQ = 20 kHz 0.7 0.6 Ipk/Io = p 0.5 Ipk/Io = 5 0.4 Ipk/Io = 10 0.3 Ipk/Io = 20 0.2 0.1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 SQUARE WAVE dc 125 145 165 1.4 1.6 TL, LEAD TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating Figure 6. Forward Power Dissipation 1000 TJ, DERATED OPERATING TEMPERATURE (_C) 150 Rtja = 33.72°C/W 51°C/W 69°C/W 83.53°C/W 96°C/W C, CAPACITANCE (pF) TJ = 25°C 148 100 146 10 0 2.0 4.0 6.0 8.0 10 12 14 16 18 20 VR, REVERSE VOLTAGE (VOLTS) 144 0 2.0 4.0 6.0 8.0 10 12 14 16 18 20 VR, DC REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance Figure 8. Typical Operating Temperature Derating* * Reverse power dissipation and the possibility of thermal runaway mus.


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