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MBRM120E Surface Mount Schottky Power Rectifier
POWERMITE® Power Surface Mount Package
The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced packaging techniques provide for a highly efficient micro miniature, space saving surface mount Rectifier. With its unique heatsink design, the Powermite has the same thermal performance as the SMA while being 50% smaller in footprint area, and delivering one of the lowest height profiles, < 1.1 mm in the industry. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are ac/dc and dc–dc converters, reverse battery protection, and “Oring” of multiple supply voltages and any other application where performance and size are critical.
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SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 20 VOLTS
CATHODE POWERMITE CASE 457 PLASTIC
ANODE
• • • • • • • • • • •
Low Profile – Maximum Height of 1.1 mm Small Footprint – Footprint Area of 8.45 mm2 Low VF Provides Higher Efficiency and Extends Battery Life Supplied in 12 mm Tape and Reel Low Thermal Resistance with Direct Thermal Path of Die on Exposed Cathode Heat Sink Powermite is JEDEC Registered as DO–216AA Case: Molded Epoxy Epoxy Meets UL94V–0 at 1/8″ Weight: 62 mg (approximately) Device Marking: BCV Lead and Mounting Surface Temperature for Soldering Purposes. 260°C Maximum for 10 Seconds
MARKING DIAGRAM
Mechanical Characteristics:
M BCV
BCV M
= Device Code = Date Code
ORDERING INFORMATION
Device Package Shipping 3000/Tape & Reel
MAXIMUM RATINGS
Please See the Table on the Following Page
MBRM120ET1 POWERMITE
MBRM120ET3 POWERMITE 12,000/Tape & Reel
© Semiconductor Components Industries, LLC, 2001
1
November, 2001 – Rev. 0
Publication Order Number: MBRM120E/D
MBRM120E
MAXIMUM RATINGS
Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TC = 130°C) Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 135°C) Non–Repetitive Peak Surge Current (Non–Repetitive peak surge current, halfwave, single phase, 60 Hz) Storage Temperature Operating Junction Temperature Voltage Rate of Change (Rated VR, TJ = 25°C) Symbol VRRM VRWM VR IO IFRM IFSM Tstg TJ dv/dt Value 20 Unit V
1.0 2.0 50 –65 to 150 –65 to 150 10,000
A A A °C °C V/ms
THERMAL CHARACTERISTICS
Thermal Resistance – Junction–to–Lead (Anode) (Note 1) Thermal Resistance – Junction–to–Tab (Cathode) (Note 1) Thermal Resistance – Junction–to–Ambient (Note 1) Rtjl Rtjtab Rtja 35 23 277 °C/W
1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 9 and 10.
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 2), See Figure 2 (IF = 0.1 A) (IF = 1.0 A) (IF = 2.0 A) Maximum Instantaneous Reverse Current (Note 2), See Figure 4 (VR = 20 V) (VR = 10 V) (VR = 5.0 V) 2. Pulse Test: Pulse Width ≤ 250 µs, Duty Cycle ≤ 2%. IR VF TJ = 25°C 0.455 0.530 0.595 TJ = 25°C 10 1.0 0.5 TJ = 100°C 0.360 0.455 0.540 TJ = 100°C 1600 500 300 mA V
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MBRM120E
iF, INSTANTANEOUS FORWARD CURRENT (AMPS) iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
10 TJ = 150°C TJ = 100°C TJ = 25°C TJ = –40°C 1.0
10 TJ = 150°C TJ = 100°C 1.0 TJ = 25°C
0.1 0.2 0.4 0.6 0.8 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
0.1 0.2
0.4
0.6
0.8
VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
IR, MAXIMUM REVERSE CURRENT (AMPS)
Figure 2. Maximum Forward Voltage
100E–3 IR, REVERSE CURRENT (AMPS) 10E–3 1E–3 TJ = 150°C TJ = 100°C
100E–3 10E–3 1E–3 TJ = 150°C TJ = 100°C
100E–6 10E–6 1E–6
100E–6 10E–6 1E–6 TJ = 25°C
100E–9 10E–9 0 5.0
TJ = 25°C
100E–9 10E–9 0 5.0 10 15 20
10
15
20
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
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MBRM120E
IO, AVERAGE FORWARD CURRENT (AMPS)
1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 25 45 65 85 105 SQUARE WAVE Ipk/Io = p Ipk/Io = 5 Ipk/Io = 10 Ipk/Io = 20 dc
PFO, AVERAGE DISSIPATION (WATTS)
FREQ = 20 kHz
0.7 0.6 Ipk/Io = p 0.5 Ipk/Io = 5 0.4 Ipk/Io = 10 0.3 Ipk/Io = 20 0.2 0.1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 SQUARE WAVE
dc
125
145
165
1.4
1.6
TL, LEAD TEMPERATURE (°C)
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
1000
TJ, DERATED OPERATING TEMPERATURE (_C)
150
Rtja = 33.72°C/W 51°C/W 69°C/W 83.53°C/W 96°C/W
C, CAPACITANCE (pF)
TJ = 25°C
148
100
146
10 0 2.0 4.0 6.0 8.0 10 12 14 16 18 20 VR, REVERSE VOLTAGE (VOLTS)
144 0 2.0 4.0 6.0 8.0 10 12 14 16 18 20 VR, DC REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
Figure 8. Typical Operating Temperature Derating*
* Reverse power dissipation and the possibility of thermal runaway mus.