MBRP20035L

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBRP20035L/D Product Preview SWITCHMODE™ Schottky Power Rectifier POWERTAP III Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheeling diode and polarity protection diodes. Very Low Forward Voltage Drop Highly Stable Oxide Passivated Junction Guardring for Stress Protection High dv/dt Capability Mechanical Characteristics: Dual Die Construction 1 Case: Epoxy, Molded with Plated Copper Heatsink Base Weight: 40 grams (approximately) Finish: All External Surfaces Corrosion Resistant 2 Base Plate Torques: See procedure given in the Package Outline Section Top Terminal Torque: 25–40 lb–in max. Shipped 50 units per foam Marking: MBRP20035L MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TC = 100°C) Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 100°C) Non–Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) Peak Repetitive Reverse Surge Current (2.0 µs, 1.0 kHz) Storage / Operating Case Temperature Operating Junction Temperature Voltage Rate of Change (Rated VR, TJ = 25°C) Symbol VRRM...