MBRP20060

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBRP20060CT/D ™ Data Sheet SWITCHMODE™ Designer's MBRP20060CT SCHOTTKY BARRIER RECTIFIER 200 AMPERES 60 VOLTS Schottky Power Rectifier POWERTAP™ II Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheeling diode and polarity protection diodes. Guardring for Stress Protection Matched dual die construction – May be Paralleled for High Current Output High dv/dt Capability Very Low Forward Voltage Drop Mechanical Characteristics: Case: Epoxy, Molded with Metal Heatsink Base Weight: 80 grams (approximately) Finish: All External Surfaces Corrosion Resistant Base Plate Torques: See procedure given in the Package Outline Section Top Terminal Torque: 70 in– lb max. Shipped 25 units per foam Marking: MBRP20060CT MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TC = 120°C) Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 125°C) Per Leg Per Package Per Leg Symbol VRRM VRWM VR IO IFRM IFSM Tstg, TC TJ dv/dt Value 60 Unit Volts 1 2 3 CASE 357C-03 POWERTAP II 100 200 200 1500 – 55 to +150 – 55 to +150 1,000 Amps Amps Amps °C °C V/µs °C/W Non-R...