MBRP400100CTL

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBRP400100CTL/D Advance Information POWERTAP II™ SWITCHMODE™ Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: Features: Dual Diode Construction — May be Paralleled for Higher Current Output Guardring for Stress Protection Low Forward Voltage Drop 150°C Operating Junction Temperature Recyclable Epoxy Guaranteed Reverse Avalanche Energy Capability Improved Mechanical Ratings 1 2 3 MBRP400100CTL SCHOTTKY BARRIER RECTIFIER 400 AMPERES 100 VOLTS 2 1 3 CASE 357C–03 POWERTAP II MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TC = 100°C) Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 100°C) Non–Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) Peak Repetitive Reverse Current (2.0 ms, 1.0 kHz) Storage and Operating Case Temperature Operating Junction Temperature Voltage Rate of Change (Rated VR) Per Leg Per Device Symbol VRRM VRWM VR IF(AV) IFRM IFSM IRRM Tstg, TC TJ dv/dt Value 100 Unit V 200 400 400 2500 2.0 A A A A °C °C V/µs *55 to +150 *55 to +150 1000 0.45 THERMAL CHARACTERISTICS Thermal Resistance — Junction–to–Case Per Leg RθJC °C/W ELECTRICAL CHARACTERISTICS Rating Maximum Instantaneous Forward Voltage (1) (IF = ...