DatasheetsPDF.com

MBRS190TR Dataheets PDF



Part Number MBRS190TR
Manufacturers International Rectifier
Logo International Rectifier
Description SCHOTTKY RECTIFIER
Datasheet MBRS190TR DatasheetMBRS190TR Datasheet (PDF)

Bulletin PD-20592 rev. C 05/02 MBRS190TR MBRS1100TR SCHOTTKY RECTIFIER 1 Amp SMB Major Ratings and Characteristics Characteristics IF(AV) Rectangular waveform VRRM IFSM @ tp = 5 µs sine VF TJ @ 1.0 Apk, TJ=125°C range Description/Features The MBRS190TR, MBRS1100TR surface-mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, free-wheeling di.

  MBRS190TR   MBRS190TR


Document
Bulletin PD-20592 rev. C 05/02 MBRS190TR MBRS1100TR SCHOTTKY RECTIFIER 1 Amp SMB Major Ratings and Characteristics Characteristics IF(AV) Rectangular waveform VRRM IFSM @ tp = 5 µs sine VF TJ @ 1.0 Apk, TJ=125°C range Description/Features The MBRS190TR, MBRS1100TR surface-mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, free-wheeling diodes, battery charging, and reverse battery protection. Small foot print, surface mountable Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability MBR190TR MBR1100TR Units 1.0 90 - 100 870 0.63 - 55 to 175 A V A V °C Device Marking: IR19/ IR10 CATHODE ANODE 2.15 (.085) 1.80 (.071) 3.80 (.150) 3.30 (.130) 1 2 4.70 (.185) 4.10 (.161) 1 POLARITY 2 PART NUMBER 2.40 (.094) 1.90 (.075) 1.30 (.051) 0.76 (.030) 0.30 (.012) 0.15 (.006) 5.60 (.220) 5.00 (.197) 2.5 TYP. (.098 TYP.) SOLDERING PAD 2.0 TYP. (.079 TYP.) 4.2 (.165) 4.0 (.157) Outline SMB Dimensions in millimeters and (inches) For recommended footprint and soldering techniques refer to application note #AN-994 www.irf.com 1 MBRS190TR, MBRS1100TR Bulletin PD-20592 rev. C 05/02 Voltage Ratings Part number VR Max. DC Reverse Voltage (V) VRWM Max. Working Peak Reverse Voltage (V) MBRS190TR 90 MBRS1100TR 100 Absolute Maximum Ratings Parameters IF(AV) Max. Average Forward Current IFSM EAS IAR Max. Peak One Cycle Non-Repetitive Surge Current Non- Repetitive Avalanche Energy Repetitive Avalanche Current Value 1.0 870 50 5.0 0.2 Units Conditions A A 50% duty cycle @ TL = 147 °C, rectangular wave form 5µs Sine or 3µs Rect. pulse 10ms Sine or 6ms Rect. pulse mJ A TJ = 25 °C, IAS = 0.5A, L = 10mH Following any rated load condition and with rated VRRM applied Electrical Specifications Parameters VFM IRM CT LS Max. Forward Voltage Drop * See Fig. 1 * See Fig. 2 Typical Junction Capacitance Typical Series Inductance (Rated VR) (1) Pulse Width < 300µs, Duty Cycle < 2% Value (1) 0.78 0.62 0.5 1.0 42 2.0 10000 Units V V mA mA pF nH V/ µs @ 1A @ 1A TJ = 25 °C TJ = 125 °C Conditions TJ = 25 °C TJ = 125 °C VR = rated VR Max. Reverse Leakage Current (1) VR = 5VDC, (test signal range 100kHz to 1MHz) 25°C Measured lead to lead 5mm from package body dv/dt Max. Volatge Rate of Charge Thermal-Mechanical Specifications Parameters TJ Tstg Max. Storage Temperature Range (**) 80 °C/W DC operation Value - 55 to 175 36 Units °C °C Conditions Max. Junction Temperature Range (*) - 55 to 175 RthJL Max. Thermal Resistance Junction to Lead RthJA Max. Thermal Resistance Junction to Ambient wt Approximate Weight Case Style Device Marking (*) dPtot °C/W DC operation (See Fig. 4) 0.10(0.003) g (oz.) SMB IR19-IR10 Similar to DO-214AA 1 < thermal runaway condition for a diode on its own heatsink dTj Rth( j-a) (**) Mounted 1 inch square PCB 2 www.irf.com MBRS190TR, MBRS1100TR Bulletin PD-20592 rev. C 05/02 10 Reverse Current - I R (m A) 10 Tj = 175˚C 1 0.1 0.01 0.001 0.0001 .00001 0 150˚C 125˚C 100˚C Tj = 175˚C Tj = 125˚C (A) 75˚C 50˚C Tj = 25˚C Instantaneous Forward Current - I F 25˚C 20 40 60 80 100 1 Reverse Voltage - VR (V) Fig. 2 - Typical Peak Reverse Current Vs. Reverse Voltage 100 Junction Capacitance - C T (p F) T = 25˚C J 0.1 0.2 10 0.4 0.6 0.8 1 0 20 40 60 80 100 Forward Voltage Drop - VFM (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage 100 (°C/W) 10 Thermal Impedance Z D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 thJC PDM t1 1 Single Pulse (Thermal Resistance) Notes: 1. Duty factor D = t1/ t2 t2 . . 2. Peak Tj = Pdm x ZthJC + Tc 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (Seconds) Fig. 4 - Max. Thermal Impedance Z thJC Characteristics (Per Leg) www.irf.com 3 MBRS190TR, MBRS1100TR Bulletin PD-20592 rev. C 05/02 180 Allowable Lead Temperature (°C) 1 DC Average Power Loss (Watts) D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 170 160 150 140 0.8 0.6 0.4 0.2 0 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 RMS Limit DC 130 Square wave (D = 0.50) Rated Vr applied 120 110 0 0.4 0.8 1.2 1.6 Average Forward Current - I F(AV) (A) Fig. 4 - Maximum Average Forward Current Vs. Allowable Lead Temperature see note (2) 0 0.3 0.6 0.9 1.2 1.5 Average Forward Current - I F(AV) (A) Fig. 5 - Maximum Average Forward Dissipation Vs. Average Forward Current Non-Repetitive Surge Current - I (A) FSM 1000 100 At Any Rated Load Condition And With rated Vrrm Applied Following Surge 10 10 100 1000 10000 Square Wave Pulse Duration - Tp (Microsec) Fig. 6 - Maximum Peak Surge Forward Current Vs. Pulse Duration (2) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdRE.


MBRS190T3 MBRS190TR MBRS2040LT3


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)