MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MBRV7030CTL/D
™ Data Sheet SWITCHMODE™
MBRV7...
MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MBRV7030CTL/D
™ Data Sheet SWITCHMODE™
MBRV7030CTL
Motorola Preferred Device
Schottky Power Rectifier
D3PAK Power Surface Mount Package
Employing the
Schottky Barrier principle in a large area metal–to–silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. Compact Package Ideal for Automated Handling 1 Short Heat Sink Tab Manufactured — Not Sheared 3 Highly Stable Oxide Passivated Junction Guardring for Over–voltage Protection Low Forward Voltage Drop Monolithic Dual Die Construction. May be Paralleled for High Current Output. Mechanical Characteristics: Case: Epoxy, Molded Weight: 2 Grams (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Maximum Temperature of 260°C for 10 Seconds for Soldering Shipped 29 Units per Plastic Tube Marking: MBRV7030CTL MAXIMUM RATINGS
Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TC = 135°C) Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 135°C) Non–Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) Storage / Operating Case Temperature Operating Juncti...