MBT3904DW2T1

MBT3904DW1T1, MBT3904DW2T1 Dual General Purpose Transistors The MBT3904DW1T1 and MBT3904DW2T1 devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low−power surface mount applications where board space is at a premium. Features http://onsemi.com MARKING DIAGRAM 6 6 1 SOT−363/SC−88/ SC70−6 CASE 419B 1 XX = MA for MBT3904DW1T1 MJ for MBT3904DW2T1 d = Date Code (3) (2) (1) XXd hFE, 100−300 Low VCE(sat), ≤ 0.4 V Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7−inch/3,000 Unit Tape and Reel Pb−Free Packages are Available MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Electrostatic Discharge Symbol VCEO VCBO VEBO IC ESD Value 40 60 6.0 200 HBM>16000, MM>2000 Unit Vdc Vdc Vdc mAdc V (3) (2) (1) (4) (5) MBT3904DW1T1 STYLE 1 (6) Q1 Q2 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. Q1 Q2 THERAML CHARACTERISTICS Characteristic Total Package Dissipation...