Silicon Epicap Diode
LESHAN RADIO COMPANY, LTD.
Silicon Epicap Diode
Designed for general frequency control and tuning applications; providi...
Description
LESHAN RADIO COMPANY, LTD.
Silicon Epicap Diode
Designed for general frequency control and tuning applications; providing solid–state reliability in replacement of mechanical tuning methods.
High Q with Guaranteed Minimum Values at VHF Frequencies Controlled and Uniform Tuning Ratio Available in Surface Mount Package
MMBV109LT1 MBV109T1 MV209
26–32 pF VOLTAGE VARIABLE CAPACITANCE DIODES
3 CATHODE
1 ANODE
MAXIMUM RATINGS
Rating
Symbol
Value
MBV109T1 MMBV109LT1 MV209
Reverse Voltage Forward Current Device Dissipation @T A = 25°C Derate above 25°C
VR IF PD
280 2.8
30 200
200 200 2.0 1.6
Junction Temperature Storage Temperature Range DEVICEMARKING
TJ T stg
+125 –55 to +150
MBV109T1= J4A, MMBV109LT1 =M4A, MV209 = MV209
ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)
Characteristic
Symbol
Min
Reverse Breakdown Voltage ( I R = 10 µ Adc) Reverse Voltage Leakage Current ( V R = 25Vdc) Diode Capacitance Temperature Coefficient (V R = 3.0 Vdc,...
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