MBV109T1

LESHAN RADIO COMPANY, LTD. Silicon Epicap Diode Designed for general frequency control and tuning applications; providing solid–state reliability in replacement of mechanical tuning methods. High Q with Guaranteed Minimum Values at VHF Frequencies Controlled and Uniform Tuning Ratio Available in Surface Mount Package MMBV109LT1 MBV109T1 MV209 26–32 pF VOLTAGE VARIABLE CAPACITANCE DIODES 3 CATHODE 1 ANODE MAXIMUM RATINGS Rating Symbol Value MBV109T1 MMBV109LT1 MV209 Reverse Voltage Forward Current Device Dissipation @T A = 25°C Derate above 25°C VR IF PD 280 2.8 30 200 200 200 2.0 1.6 Junction Temperature Storage Temperature Range DEVICEMARKING TJ T stg +125 –55 to +150 MBV109T1= J4A, MMBV109LT1 =M4A, MV209 = MV209 ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted) Characteristic Symbol Min Reverse Breakdown Voltage ( I R = 10 µ Adc) Reverse Voltage Leakage Current ( V R = 25Vdc) Diode Capacitance Temperature Coefficient (V R = 3.0 Vdc,...