PEMD10

DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMD10 NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ Preliminary specification 2001 Sep 11 Philips Semiconductors Preliminary specification NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ FEATURES 300 mW total power dissipation Very small 1.6 × 1.2 mm ultra thin package Excellent coplanarity due to straight leads Replaces two SC-75/SC-89 packaged transistors on same PCB area Reduces required PCB area Reduced pick and place costs. APPLICATIONS General purpose switching and amplification Inverter and interface circuits Circuit driver. DESCRIPTION NPN/PNP resistor-equipped transistors in a SOT666 plastic package. TR1 handbook, halfpage PEMD10 QUICK REFERENCE DATA SYMBOL VCEO ICM R1 R2 PINNING PIN 1, 4 2, 5 6, 3 SYMBOL TR1; TR2 TR1; TR2 TR1; TR2 base collector DESCRIPTION emitter PARAMETER collector-emitter voltage peak collector current bias resistor bias resistor MAX. 50 100 2.2 47 UNIT V mA kΩ kΩ 6 5 4 R1 5 4 6 R2 TR2 MARKING TYPE NUMBER PEMD10 MARKING CODE D1 1 Top view 2 3 1 MAM448 R2 R1 2 3 Fig.1 Simplified outline (SOT666) and symbol. 2, 5 1, 4 MBK120 6, 3 Fig.2 Equivalent inverter symbol. 2001 Sep 11 2 Philips Semiconductors Preliminary specification NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS − − − − − − − − − Tamb ≤ 25 °C; note ...