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MC-4R64CEE6C Dataheets PDF



Part Number MC-4R64CEE6C
Manufacturers NEC
Logo NEC
Description Direct Rambus DRAM RIMM Module
Datasheet MC-4R64CEE6C DatasheetMC-4R64CEE6C Datasheet (PDF)

PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT MC-4R64CEE6B, 4R64CEE6C Direct RambusTM DRAM RIMMTM Module 64M-BYTE (32M-WORD x 16-BIT) Description The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other applications where high bandwidth and low latency are required. MC-4R64CEE6B, 4R64CEE6C modules consists of four 128M Direct Rambus DRAM (.

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PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT MC-4R64CEE6B, 4R64CEE6C Direct RambusTM DRAM RIMMTM Module 64M-BYTE (32M-WORD x 16-BIT) Description The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other applications where high bandwidth and low latency are required. MC-4R64CEE6B, 4R64CEE6C modules consists of four 128M Direct Rambus DRAM (Direct RDRAM™) devices (µPD488448). These are extremely high-speed CMOS DRAMs organized as 8M words by 16 bits. The use of Rambus Signaling Level (RSL) technology permits 600MHz, 711MHz or 800MHz transfer rates while using conventional system and board design technologies. Direct RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per sixteen bytes). The architecture of the Direct RDRAM enables the highest sustained bandwidth for multiple, simultaneous, randomly addressed memory transactions. The separate control and data buses with independent row and column control yield over 95 % bus efficiency. The Direct RDRAM's 32 banks support up to four simultaneous transactions per device. Features • 184 edge connector pads with 1mm pad spacing • 64 MB Direct RDRAM storage • Each RDRAM® has 32 banks, for 128 banks total on module • Gold plated contacts • RDRAMs use Chip Scale Package (CSP) • Serial Presence Detect support • Operates from a 2.5 V supply • Low power and powerdown self refresh modes • Separate Row and Column buses for higher efficiency The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. M14537EJ1V1DS00 (1st edition) Date Published November 1999 NS CP (K) Printed in Japan The mark 5 shows major revised points. © 1999 MC-4R64CEE6B, 4R64CEE6C Order information Part number Organization I/O Freq. MHz MC-4R64CEE6B - 845 MC-4R64CEE6B - 745 MC-4R64CEE6B - 653 MC-4R64CEE6C - 845 MC-4R64CEE6C - 745 MC-4R64CEE6C - 653 32M x 16 800 711 600 800 711 600 RAS access time ns 45 45 53 45 45 53 184 edge connector pads RIMM with heat spreader Edge connector : Gold plated 4 pieces of Package Mounted devices µPD488448FB FBGA (D BGA ) package 4 pieces of 2 TM µPD488448FF FBGA (µBGA®) package 2 Preliminary Data Sheet M14537EJ1V1DS00 MC-4R64CEE6B, 4R64CEE6C Module Pad Configuration B1 B2 B3 B4 B5 B6 B7 B8 B9 B10 B11 B12 B13 B14 B15 B16 B17 B18 B19 B20 B21 B22 B23 B24 B25 B26 B27 B28 B29 B30 B31 B32 B33 B34 B35 B36 B37 B38 B39 B40 B41 B42 B43 B44 B45 B46 GND LDQA7 GND LDQA5 GND LDQA3 GND LDQA1 GND LCFM GND LCFMN GND NC GND LROW2 GND LROW0 GND LCOL3 GND LCOL1 GND LDQB0 GND LDQB2 GND LDQB4 GND LDQB6 GND LDQB8 GND LCMD VCMOS SIN VCMOS NC GND NC VDD VDD NC NC NC NC GND LDQA8 GND LDQA6 GND LDQA4 GND LDQA2 GND LDQA0 GND LCTMN GND LCTM GND NC GND LROW1 GND LCOL4 GND LCOL2 GND LCOL0 GND LDQB1 GND LDQB3 GND LDQB5 GND LDQB7 GND LSCK VCMOS SOUT VCMOS NC GND NC VDD VDD NC NC NC NC A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 A19 A20 A21 A22 A23 A24 A25 A26 A27 A28 A29 A30 A31 A32 A33 A34 A35 A36 A37 A38 A39 A40 A41 A42 A43 A44 A45 A46 LCFM, LCFMN, Side B Side A RCFM, RCFMN : Clock from master LCTM, LCTMN, RCTM, RCTMN : Clock to master LCMD, RCMD : Serial Command Pad B47 B48 B49 B50 B51 B52 B53 B54 B55 B56 B57 B58 B59 B60 B61 B62 B63 B64 B65 B66 B67 B68 B69 B70 B71 B72 B73 B74 B75 B76 B77 B78 B79 B80 B81 B82 B83 B84 B85 B86 B87 B88 B89 B90 B91 B92 NC NC NC NC VREF GND SA0 VDD SA1 SVDD SA2 VDD RCMD GND RDQB8 GND RDQB6 GND RDQB4 GND RDQB2 GND RDQB0 GND RCOL1 GND RCOL3 GND RROW0 GND RROW2 GND NC GND RCFMN GND RCFM GND RDQA1 GND RDQA3 GND RDQA5 GND RDQA7 GND NC NC NC NC VREF GND SCL VDD SDA SVDD SWP VDD RSCK GND RDQB7 GND RDQB5 GND RDQB3 GND RDQB1 GND RCOL0 GND RCOL2 GND RCOL4 GND RROW1 GND NC GND RCTM GND RCTMN GND RDQA0 GND RDQA2 GND RDQA4 GND RDQA6 GND RDQA8 GND A47 A48 A49 A50 A51 A52 A53 A54 A55 A56 A57 A58 A59 A60 A61 A62 A63 A64 A65 A66 A67 A68 A69 A70 A71 A72 A73 A74 A75 A76 A77 A78 A79 A80 A81 A82 A83 A84 A85 A86 A87 A88 A89 A90 A91 A92 LROW2 - LROW0, RROW2 - RROW0 : Row bus LCOL4 - LCOL0, RCOL4 - RCOL0 LDQA8 - LDQA0, RDQA8 - RDQA0 LDQB8 - LDQB0, RDQB8 - RDQB0 SA0 - SA2 SCL, SDA SIN, SOUT SVDD SWP VCMOS VDD VREF GND NC : Data bus B LSCK, RSCK : Clock input : Serial Presence Detect Address : Serial Presence Detect Clock : Serial I/O : SPD Voltage : Serial Presence Detect Write Protect : Supply voltage for serial pads : Supply voltage : Logic threshold : Ground reference : These pads are not connected : Data bus A : Column bus Preliminary Data Sheet M14537EJ1V1DS00 3 MC-4R64CEE6B, 4R64CEE6C Module Pad Names Pad A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 A19 A20 A21 A22 A23 A24 A25 A26 A27 A28 A29 A30 A31 A32 A.


MC-4R64CEE6B MC-4R64CEE6C MC-4R64CPE6C


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