PEMH10

DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMH10 NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ Preliminary specification 2001 Oct 22 Philips Semiconductors Preliminary specification NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ FEATURES 300 mW total power dissipation Very small 1.6 × 1.2 mm ultra thin package Self alignment during soldering due to straight leads Replaces two SC-75/SC-89 packaged transistors on same PCB area Reduces required PCB area Reduced pick and place costs. APPLICATIONS General purpose switching and amplification Inverter and interface circuits Circuit driver. DESCRIPTION NPN resistor-equipped transistors in a SOT666 plastic package. MARKING TYPE NUMBER PEMH10 MARKING CODE 10 1 Top view TR1 R2 handbook, halfpage 6 PEMH10 QUICK REFERENCE DATA SYMBOL VCEO ICM TR1 TR2 R1 R2 PINNING PIN 1, 4 2, 5 6, 3 emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2 PARAMETER collector-emitter voltage peak collector current NPN NPN bias resistor bias resistor MAX. 50 100 − − 2.2 47 UNIT V mA − − kΩ kΩ 5 4 6 5 4 R1 R2 TR2 R1 2 3 1 MHC049 2 3 Fig.1 Simplified outline (SOT666) and symbol. 2, 5 1, 4 MBK120 6, 3 Fig.2 Equivalent inverter symbol. 2001 Oct 22 2 Philips Semiconductors Preliminary specification NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per transistor VCBO VCEO VEBO Vi collector-base...